A comparison of in situ as doping with ex situ CdCl 2 treatment of CdTe solar cells

Vincent Barrioz*, Rachael L. Rowlands, Eurig W. Jones, Stuart J C Irvine, Guillaume Zoppi, Ken Durose

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

A comparison has been made of MOCVD grown CdTe/ CdS solar cells processed either by ex situ annealing with CdCl 2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using J sc measurements on arrays of gold contacts to the CdTe. The J sc increased from around 1 mA cm -2 for undoped and unannealed layers to a range of 25-30 mA cm -2 for CdCb annealed layers. In situ arsenic doping resulted in J sc values up to 18 mA cm -2. The annealing characteristics were very different for these films, compared with the CdCl 2 annealed films, with annealing at 500°C dramatically reducing the J sc. Only annealing under nitrogen at 400°C produced an improvement in J sc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

Original languageEnglish
Article numberF3.4
Pages (from-to)67-72
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume865
DOIs
Publication statusPublished - 1 Dec 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 29 Mar 20051 Apr 2005

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