A comparison has been made of MOCVD grown CdTe/ CdS solar cells processed either by ex situ annealing with CdCl 2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using J sc measurements on arrays of gold contacts to the CdTe. The J sc increased from around 1 mA cm -2 for undoped and unannealed layers to a range of 25-30 mA cm -2 for CdCb annealed layers. In situ arsenic doping resulted in J sc values up to 18 mA cm -2. The annealing characteristics were very different for these films, compared with the CdCl 2 annealed films, with annealing at 500°C dramatically reducing the J sc. Only annealing under nitrogen at 400°C produced an improvement in J sc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.
|Number of pages||6|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 1 Dec 2005|
|Event||2005 Materials Research Society Spring Meeting - San Francisco, CA, United States|
Duration: 29 Mar 2005 → 1 Apr 2005