A comparison of in situ as doping with ex situ CdCl 2 treatment of CdTe solar cells

Vincent Barrioz; Rachael L. Rowlands; Eurig W. Jones; Stuart J C Irvine; Guillaume Zoppi; Ken Durose

doi:10.1557/PROC-865-F3.4

A comparison of in situ as doping with ex situ CdCl ₂ treatment of CdTe solar cells

Vincent Barrioz^*, Rachael L. Rowlands, Eurig W. Jones, Stuart J C Irvine, Guillaume Zoppi, Ken Durose

^*Corresponding author for this work

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

A comparison has been made of MOCVD grown CdTe/ CdS solar cells processed either by ex situ annealing with CdCl ₂ or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using J _sc measurements on arrays of gold contacts to the CdTe. The J _sc increased from around 1 mA cm ^-2 for undoped and unannealed layers to a range of 25-30 mA cm ^-2 for CdCb annealed layers. In situ arsenic doping resulted in J _sc values up to 18 mA cm ^-2. The annealing characteristics were very different for these films, compared with the CdCl ₂ annealed films, with annealing at 500°C dramatically reducing the J _sc. Only annealing under nitrogen at 400°C produced an improvement in J _sc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

Original language	English
Article number	F3.4
Pages (from-to)	67-72
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	865
DOIs	https://doi.org/10.1557/PROC-865-F3.4
Publication status	Published - 1 Dec 2005
Event	2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: 29 Mar 2005 → 1 Apr 2005

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10.1557/PROC-865-F3.4

Cite this

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title = "A comparison of in situ as doping with ex situ CdCl 2 treatment of CdTe solar cells",

abstract = "A comparison has been made of MOCVD grown CdTe/ CdS solar cells processed either by ex situ annealing with CdCl 2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using J sc measurements on arrays of gold contacts to the CdTe. The J sc increased from around 1 mA cm -2 for undoped and unannealed layers to a range of 25-30 mA cm -2 for CdCb annealed layers. In situ arsenic doping resulted in J sc values up to 18 mA cm -2. The annealing characteristics were very different for these films, compared with the CdCl 2 annealed films, with annealing at 500°C dramatically reducing the J sc. Only annealing under nitrogen at 400°C produced an improvement in J sc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.",

author = "Vincent Barrioz and Rowlands, {Rachael L.} and Jones, {Eurig W.} and Irvine, {Stuart J C} and Guillaume Zoppi and Ken Durose",

year = "2005",

month = dec,

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doi = "10.1557/PROC-865-F3.4",

language = "English",

volume = "865",

pages = "67--72",

journal = "Materials Research Society Symposium Proceedings",

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note = "2005 Materials Research Society Spring Meeting ; Conference date: 29-03-2005 Through 01-04-2005",

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T1 - A comparison of in situ as doping with ex situ CdCl 2 treatment of CdTe solar cells

AU - Barrioz, Vincent

AU - Rowlands, Rachael L.

AU - Jones, Eurig W.

AU - Irvine, Stuart J C

AU - Zoppi, Guillaume

AU - Durose, Ken

PY - 2005/12/1

Y1 - 2005/12/1

N2 - A comparison has been made of MOCVD grown CdTe/ CdS solar cells processed either by ex situ annealing with CdCl 2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using J sc measurements on arrays of gold contacts to the CdTe. The J sc increased from around 1 mA cm -2 for undoped and unannealed layers to a range of 25-30 mA cm -2 for CdCb annealed layers. In situ arsenic doping resulted in J sc values up to 18 mA cm -2. The annealing characteristics were very different for these films, compared with the CdCl 2 annealed films, with annealing at 500°C dramatically reducing the J sc. Only annealing under nitrogen at 400°C produced an improvement in J sc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

AB - A comparison has been made of MOCVD grown CdTe/ CdS solar cells processed either by ex situ annealing with CdCl 2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using J sc measurements on arrays of gold contacts to the CdTe. The J sc increased from around 1 mA cm -2 for undoped and unannealed layers to a range of 25-30 mA cm -2 for CdCb annealed layers. In situ arsenic doping resulted in J sc values up to 18 mA cm -2. The annealing characteristics were very different for these films, compared with the CdCl 2 annealed films, with annealing at 500°C dramatically reducing the J sc. Only annealing under nitrogen at 400°C produced an improvement in J sc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

U2 - 10.1557/PROC-865-F3.4

DO - 10.1557/PROC-865-F3.4

M3 - Conference article

SN - 0272-9172

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SP - 67

EP - 72

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

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T2 - 2005 Materials Research Society Spring Meeting

Y2 - 29 March 2005 through 1 April 2005