Abstract
A current-source gate driver (CSG) is considered as a candidate to improve the switching performance of Silicon Carbide (SiC) MOSFET compared with a SiC MOSFET powered by a voltage-source gate driver (VSG). Various CSG circuits have been proposed to promote the switching transients by generating a constant gate current. However, those circuits are normally designed with complicated structures and high costs due to extra components and control signals. This paper proposes a cost-efficient approach to adjust the gate current of the conventional VSG which can improve its dynamic performance of the devices. Following the comparison analysis of CSG and VSG, a simple-structure circuit is introduced to replace the gate resistor in the conventional VSG. This circuit transforms that the gate current shows constant levels during the switching transients, which exhibits current-source characteristics. Simulation and experimental studies have been undertaken to verify the effectiveness of the proposed circuit. The results show that the turn-on switching time and oscillation can be reduced using the proposed circuit compared with the conventional VSG and the proposed circuit is less hardware intensive compared to other CSGs.
Original language | English |
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Title of host publication | 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia) |
Place of Publication | Piscataway |
Publisher | IEEE |
Pages | 979-984 |
Number of pages | 6 |
ISBN (Print) | 9781728153025, 9781728153018 |
DOIs | |
Publication status | Published - 29 Nov 2020 |
Event | IPEMC 2020 ECCE Asia - Nanjing, Nanjing, China Duration: 29 Nov 2020 → 2 Dec 2020 https://epe-ecce-conferences.com/epe2020/ipemc-2020-ecce-asia/ |
Conference
Conference | IPEMC 2020 ECCE Asia |
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Country/Territory | China |
City | Nanjing |
Period | 29/11/20 → 2/12/20 |
Internet address |
Keywords
- current-source gate driver
- switching performance
- SiC MOSFET module
- turn-on time