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A cost-efficient Current-Source Gate Driver for SiC MOSFET Module and its Comparison with Voltage-Source Gate Driver

Xiang Wang, Haimeng Wu, Volker Pickert

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Citations (Scopus)
    718 Downloads (Pure)

    Abstract

    A current-source gate driver (CSG) is considered as a candidate to improve the switching performance of Silicon Carbide (SiC) MOSFET compared with a SiC MOSFET powered by a voltage-source gate driver (VSG). Various CSG circuits have been proposed to promote the switching transients by generating a constant gate current. However, those circuits are normally designed with complicated structures and high costs due to extra components and control signals. This paper proposes a cost-efficient approach to adjust the gate current of the conventional VSG which can improve its dynamic performance of the devices. Following the comparison analysis of CSG and VSG, a simple-structure circuit is introduced to replace the gate resistor in the conventional VSG. This circuit transforms that the gate current shows constant levels during the switching transients, which exhibits current-source characteristics. Simulation and experimental studies have been undertaken to verify the effectiveness of the proposed circuit. The results show that the turn-on switching time and oscillation can be reduced using the proposed circuit compared with the conventional VSG and the proposed circuit is less hardware intensive compared to other CSGs.
    Original languageEnglish
    Title of host publication2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia)
    Place of PublicationPiscataway
    PublisherIEEE
    Pages979-984
    Number of pages6
    ISBN (Print)9781728153025, 9781728153018
    DOIs
    Publication statusPublished - 29 Nov 2020
    EventIPEMC 2020 ECCE Asia - Nanjing, Nanjing, China
    Duration: 29 Nov 20202 Dec 2020
    https://epe-ecce-conferences.com/epe2020/ipemc-2020-ecce-asia/

    Conference

    ConferenceIPEMC 2020 ECCE Asia
    Country/TerritoryChina
    CityNanjing
    Period29/11/202/12/20
    Internet address

    Keywords

    • current-source gate driver
    • switching performance
    • SiC MOSFET module
    • turn-on time

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