A new approach to thin-film SnS PV using MOCVD

Andrew J. Clayton; Stuart J.C. Irvine; Cecile M.E. Charbonneau; Peter Siderfin; Vincent Barrioz

doi:10.1080/14328917.2015.1121318

A new approach to thin-film SnS PV using MOCVD

Andrew J. Clayton^*, Stuart J.C. Irvine, Cecile M.E. Charbonneau, Peter Siderfin, Vincent Barrioz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

SnS thin films were deposited by an inline metal organic chemical vapour deposition process using tetramethyltin and diethyldisulfide as precursors. A N₂/H₂ carrier was used with pre-mixing of the precursors before overhead injection into the deposition chamber. NSG AB soda lime glass was used as the substrate with area of 50 × 50 mm². The resulting SnS films had calculated band gaps between 1.3 and 1.5 eV. Scanning electron microscopy showed relatively large grains ranging from 0.5 to 1 μm across for a SnS film sample deposited at 556–558 °C. X-ray diffraction confirmed the films to be SnS, but with small concentrations of impure phases such as Sn₂S₃. Post-growth annealing treatment in a N₂atmosphere at 435 °C using SnCl₂/MeOH solution at different molar concentrations only showed changes to the film at 0.05 M. The 0.05 M SnCl₂/MeOH treatment was aggressive with blistering and etching occurring.

Original language	English
Pages (from-to)	477-481
Number of pages	5
Journal	Energy Materials: Materials Science and Engineering for Energy Systems
Volume	10
Issue number	4
DOIs	https://doi.org/10.1080/14328917.2015.1121318
Publication status	Published - 10 Nov 2015

Keywords

MOCVD
Photovoltaics
Thin-film SnS

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1080/14328917.2015.1121318

Cite this

@article{3b41a861005343729b0f8a33dbe7c651,

title = "A new approach to thin-film SnS PV using MOCVD",

abstract = "SnS thin films were deposited by an inline metal organic chemical vapour deposition process using tetramethyltin and diethyldisulfide as precursors. A N2/H2 carrier was used with pre-mixing of the precursors before overhead injection into the deposition chamber. NSG AB soda lime glass was used as the substrate with area of 50 × 50 mm2. The resulting SnS films had calculated band gaps between 1.3 and 1.5 eV. Scanning electron microscopy showed relatively large grains ranging from 0.5 to 1 μm across for a SnS film sample deposited at 556–558 °C. X-ray diffraction confirmed the films to be SnS, but with small concentrations of impure phases such as Sn2S3. Post-growth annealing treatment in a N2atmosphere at 435 °C using SnCl2/MeOH solution at different molar concentrations only showed changes to the film at 0.05 M. The 0.05 M SnCl2/MeOH treatment was aggressive with blistering and etching occurring.",

keywords = "MOCVD, Photovoltaics, Thin-film SnS",

author = "Clayton, \{Andrew J.\} and Irvine, \{Stuart J.C.\} and Charbonneau, \{Cecile M.E.\} and Peter Siderfin and Vincent Barrioz",

year = "2015",

month = nov,

day = "10",

doi = "10.1080/14328917.2015.1121318",

language = "English",

volume = "10",

pages = "477--481",

journal = "Energy Materials: Materials Science and Engineering for Energy Systems",

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publisher = "Maney Publishing",

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T1 - A new approach to thin-film SnS PV using MOCVD

AU - Clayton, Andrew J.

AU - Irvine, Stuart J.C.

AU - Charbonneau, Cecile M.E.

AU - Siderfin, Peter

AU - Barrioz, Vincent

PY - 2015/11/10

Y1 - 2015/11/10

N2 - SnS thin films were deposited by an inline metal organic chemical vapour deposition process using tetramethyltin and diethyldisulfide as precursors. A N2/H2 carrier was used with pre-mixing of the precursors before overhead injection into the deposition chamber. NSG AB soda lime glass was used as the substrate with area of 50 × 50 mm2. The resulting SnS films had calculated band gaps between 1.3 and 1.5 eV. Scanning electron microscopy showed relatively large grains ranging from 0.5 to 1 μm across for a SnS film sample deposited at 556–558 °C. X-ray diffraction confirmed the films to be SnS, but with small concentrations of impure phases such as Sn2S3. Post-growth annealing treatment in a N2atmosphere at 435 °C using SnCl2/MeOH solution at different molar concentrations only showed changes to the film at 0.05 M. The 0.05 M SnCl2/MeOH treatment was aggressive with blistering and etching occurring.

AB - SnS thin films were deposited by an inline metal organic chemical vapour deposition process using tetramethyltin and diethyldisulfide as precursors. A N2/H2 carrier was used with pre-mixing of the precursors before overhead injection into the deposition chamber. NSG AB soda lime glass was used as the substrate with area of 50 × 50 mm2. The resulting SnS films had calculated band gaps between 1.3 and 1.5 eV. Scanning electron microscopy showed relatively large grains ranging from 0.5 to 1 μm across for a SnS film sample deposited at 556–558 °C. X-ray diffraction confirmed the films to be SnS, but with small concentrations of impure phases such as Sn2S3. Post-growth annealing treatment in a N2atmosphere at 435 °C using SnCl2/MeOH solution at different molar concentrations only showed changes to the film at 0.05 M. The 0.05 M SnCl2/MeOH treatment was aggressive with blistering and etching occurring.

KW - MOCVD

KW - Photovoltaics

KW - Thin-film SnS

UR - https://www.scopus.com/pages/publications/84957691292

U2 - 10.1080/14328917.2015.1121318

DO - 10.1080/14328917.2015.1121318

M3 - Article

AN - SCOPUS:84957691292

SN - 1748-9237

VL - 10

SP - 477

EP - 481

JO - Energy Materials: Materials Science and Engineering for Energy Systems

JF - Energy Materials: Materials Science and Engineering for Energy Systems

IS - 4

ER -

A new approach to thin-film SnS PV using MOCVD

Abstract

Keywords

UN SDGs

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