A novel synthesis from instability difference between SiC 3-C and 6-H crystal to form nanoparticles stems by alkali solution and its degrading various environmental pollutants

In this paper, the nano silicon carbide with different sizes was prepared without hydrofluoric acid by using simple milling and related low temperature etching process in normal pressure. Also, it was the first time verified that 3-C dominated crystalline form of polycrystalline silicon carbide is etched, leaving the 6-H silicon carbide crystalline form by the Raman spectra and HAADF-STEM (high-angle-annular dark-field scanning transmission electron microscopy) imaging that. The application of the alkali etching technique could precise control the partial structural transformation of silicon carbide crystals to a certain extent, which further expands the traditional crystal structure transformation process. In addition, this paper demonstrates the silicon carbide composites in photocatalytic removal of various organic pollutants from aqueous solutions. In the photo degradation of MB (Methylene Blue), the removal rate of the modified silicon carbide shown ten times as much as the commercial silicon carbide. The 1-h degradation efficiency was significantly higher in the 50 μL H2O2 system (100.0%, 86.8% and 89.9% removal of MB, Rhodamine B, Methyl Orange and Tetracycline hydrochloride, respectively). Furthermore, the unit spin concentrations of vacancy defects, superoxide radicals and hydroxyl radicals were quantitatively analyzed. The vacancy defects of the etched material were 1000 times higher than before, and the modified silicon carbide had higher transmittance to infrared and visible light. It strongly absorbs ultraviolet light. Conversely, the research on micron-sized silicon carbide loaded with Ag and Pt atoms found that it had a nitrogen fixation effect during the warming up process, in a nitrogen atmosphere.