A Rapid Screening Method for Investigating the Effect of Processing Parameters on CdTe/CdS Solar Cell Performance

Mohammed Al Turkestani; Ken Durose; Ben Wakeling; David Lane; Stuart Irvine; Vincent Barrioz

doi:10.1557/PROC-1165-M05-17

A Rapid Screening Method for Investigating the Effect of Processing Parameters on CdTe/CdS Solar Cell Performance

Mohammed Al Turkestani, Ken Durose, Ben Wakeling, David Lane, Stuart Irvine, Vincent Barrioz

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A rapid screening method is reported in which material processing parameters are investigated as a function of the CdTe absorber thickness in CdTe/CdS solar cells. It has been used to investigate i) the optimum absorber thickness for CdCl2 processing at 380°C for 10 mins, and ii) the effect on device performance of post-growth annealing of CdS layer with H2, N2, and O2. It was found that the optimum thickness of CdTe compatible with the processing was ∼3μm. The device results were independent of the post-growth treatment of the CdS for the conditions investigated here. The bevel method allowed for ∼30 data points to be obtained from each sample, this giving a significant advantage over conventional experimental methods.

Original language	English
Journal	MRS Proceedings
Volume	1165
DOIs	https://doi.org/10.1557/PROC-1165-M05-17
Publication status	Published - 2009

Keywords

Cd
Te
S

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10.1557/PROC-1165-M05-17

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title = "A Rapid Screening Method for Investigating the Effect of Processing Parameters on CdTe/CdS Solar Cell Performance",

abstract = "A rapid screening method is reported in which material processing parameters are investigated as a function of the CdTe absorber thickness in CdTe/CdS solar cells. It has been used to investigate i) the optimum absorber thickness for CdCl2 processing at 380°C for 10 mins, and ii) the effect on device performance of post-growth annealing of CdS layer with H2, N2, and O2. It was found that the optimum thickness of CdTe compatible with the processing was ∼3μm. The device results were independent of the post-growth treatment of the CdS for the conditions investigated here. The bevel method allowed for ∼30 data points to be obtained from each sample, this giving a significant advantage over conventional experimental methods.",

keywords = "Cd, Te, S",

author = "{Al Turkestani}, Mohammed and Ken Durose and Ben Wakeling and David Lane and Stuart Irvine and Vincent Barrioz",

year = "2009",

doi = "10.1557/PROC-1165-M05-17",

language = "English",

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journal = "MRS Proceedings",

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publisher = "Cambridge University Press",

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T1 - A Rapid Screening Method for Investigating the Effect of Processing Parameters on CdTe/CdS Solar Cell Performance

AU - Al Turkestani, Mohammed

AU - Durose, Ken

AU - Wakeling, Ben

AU - Lane, David

AU - Irvine, Stuart

AU - Barrioz, Vincent

PY - 2009

Y1 - 2009

N2 - A rapid screening method is reported in which material processing parameters are investigated as a function of the CdTe absorber thickness in CdTe/CdS solar cells. It has been used to investigate i) the optimum absorber thickness for CdCl2 processing at 380°C for 10 mins, and ii) the effect on device performance of post-growth annealing of CdS layer with H2, N2, and O2. It was found that the optimum thickness of CdTe compatible with the processing was ∼3μm. The device results were independent of the post-growth treatment of the CdS for the conditions investigated here. The bevel method allowed for ∼30 data points to be obtained from each sample, this giving a significant advantage over conventional experimental methods.

AB - A rapid screening method is reported in which material processing parameters are investigated as a function of the CdTe absorber thickness in CdTe/CdS solar cells. It has been used to investigate i) the optimum absorber thickness for CdCl2 processing at 380°C for 10 mins, and ii) the effect on device performance of post-growth annealing of CdS layer with H2, N2, and O2. It was found that the optimum thickness of CdTe compatible with the processing was ∼3μm. The device results were independent of the post-growth treatment of the CdS for the conditions investigated here. The bevel method allowed for ∼30 data points to be obtained from each sample, this giving a significant advantage over conventional experimental methods.

KW - Cd

KW - Te

KW - S

U2 - 10.1557/PROC-1165-M05-17

DO - 10.1557/PROC-1165-M05-17

M3 - Article

SN - 2059-8521

VL - 1165

JO - MRS Proceedings

JF - MRS Proceedings

ER -

A Rapid Screening Method for Investigating the Effect of Processing Parameters on CdTe/CdS Solar Cell Performance

Abstract

Keywords

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