A Study on the Efficiency Gain of CsSnGeI3 Solar Cells with Graphene Doping

This paper presents a newly designed ultra-thin, lead-free, and all-inorganic solar cell structure. The structure was optimized using the SCAPS-1D simulator, incorporating solid-state layers arranged as n-graphene/CsSnGeI3/p-graphene. The objective was to investigate the potential of utilizing n-graphene as the electron transport layer and p-graphene as the hole transport layer to achieve maximum power conversion efficiency. Various materials for the electron transport layer were evaluated. The optimized cell structure achieved a maximum power conversion efficiency of 20.97%. The proposed solar cell structure demonstrates promising potential as an efficient, inorganic photovoltaic device. These findings provide important insights for developing and optimizing inorganic photovoltaic cells based on CsSnGeI3, with n-graphene electron transport layers and p-graphene hole transport layers.