A three-dimensional silicon shadowmask for patterning on trenches with vertical walls

S. Morishita; Joungho Kim; F. Marty; Yifan Li; Anthony Walton; Yoshio Mita

doi:10.1109/SENSOR.2009.5285767

A three-dimensional silicon shadowmask for patterning on trenches with vertical walls

S. Morishita, Joungho Kim, F. Marty, Yifan Li, Anthony Walton, Yoshio Mita

Mechanical and Construction Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

7 Citations (Scopus)

Abstract

This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles during evaporation. The resulting tracks exhibited good isolation between adjacent metal patterns and with the resistance of the track between top and bottom of trench measured at 3.4Omega.

Original language	English
Title of host publication	Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1608-1611
ISBN (Print)	978-1-4244-4190-7
DOIs	https://doi.org/10.1109/SENSOR.2009.5285767
Publication status	Published - 2009
Event	TRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2009. - Duration: 1 Jan 2009 → …

Conference

Conference	TRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2009.
Period	1/01/09 → …

Keywords

3D patterning
shadow mask
DRIE

Access to Document

10.1109/SENSOR.2009.5285767

Cite this

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title = "A three-dimensional silicon shadowmask for patterning on trenches with vertical walls",

abstract = "This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles during evaporation. The resulting tracks exhibited good isolation between adjacent metal patterns and with the resistance of the track between top and bottom of trench measured at 3.4Omega.",

keywords = "3D patterning, shadow mask, DRIE",

author = "S. Morishita and Joungho Kim and F. Marty and Yifan Li and Anthony Walton and Yoshio Mita",

note = "This paper was presented at TRANSDUCERS 2009, 21-25 June 2009, Denver.; TRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2009. ; Conference date: 01-01-2009",

year = "2009",

doi = "10.1109/SENSOR.2009.5285767",

language = "English",

isbn = "978-1-4244-4190-7",

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booktitle = "Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International",

publisher = "IEEE",

address = "United States",

}

Morishita, S, Kim, J, Marty, F, Li, Y, Walton, A & Mita, Y 2009, A three-dimensional silicon shadowmask for patterning on trenches with vertical walls. in Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International. IEEE, Piscataway, NJ, pp. 1608-1611, TRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2009., 1/01/09. https://doi.org/10.1109/SENSOR.2009.5285767

TY - CHAP

T1 - A three-dimensional silicon shadowmask for patterning on trenches with vertical walls

AU - Morishita, S.

AU - Kim, Joungho

AU - Marty, F.

AU - Li, Yifan

AU - Walton, Anthony

AU - Mita, Yoshio

N1 - This paper was presented at TRANSDUCERS 2009, 21-25 June 2009, Denver.

PY - 2009

Y1 - 2009

N2 - This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles during evaporation. The resulting tracks exhibited good isolation between adjacent metal patterns and with the resistance of the track between top and bottom of trench measured at 3.4Omega.

AB - This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles during evaporation. The resulting tracks exhibited good isolation between adjacent metal patterns and with the resistance of the track between top and bottom of trench measured at 3.4Omega.

KW - 3D patterning

KW - shadow mask

KW - DRIE

U2 - 10.1109/SENSOR.2009.5285767

DO - 10.1109/SENSOR.2009.5285767

M3 - Chapter

SN - 978-1-4244-4190-7

SP - 1608

EP - 1611

BT - Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

PB - IEEE

CY - Piscataway, NJ

T2 - TRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2009.

Y2 - 1 January 2009

ER -

A three-dimensional silicon shadowmask for patterning on trenches with vertical walls

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Keywords

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