A three-dimensional silicon shadowmask for patterning on trenches with vertical walls

S. Morishita, Joungho Kim, F. Marty, Yifan Li, Anthony Walton, Yoshio Mita

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

7 Citations (Scopus)

Abstract

This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles during evaporation. The resulting tracks exhibited good isolation between adjacent metal patterns and with the resistance of the track between top and bottom of trench measured at 3.4Omega.
Original languageEnglish
Title of host publicationSolid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages1608-1611
ISBN (Print)978-1-4244-4190-7
DOIs
Publication statusPublished - 2009
EventTRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2009. -
Duration: 1 Jan 2009 → …

Conference

ConferenceTRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2009.
Period1/01/09 → …

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