Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements

Neil Beattie; Guillaume Zoppi; Patrick See; Ian Farrer; Martial Duchamp; Dominique Morrison; Robert Miles; David Ritchie

doi:10.1016/j.solmat.2014.07.022

Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements

Neil Beattie, Guillaume Zoppi, Patrick See, Ian Farrer, Martial Duchamp, Dominique Morrison, Robert Miles, David Ritchie

Mathematics, Physics and Electrical Engineering

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Abstract

The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.

Original language	English
Pages (from-to)	241-245
Journal	Solar Energy Materials and Solar Cells
Volume	130
Issue number	SI
Early online date	6 Aug 2014
DOIs	https://doi.org/10.1016/j.solmat.2014.07.022
Publication status	Published - Nov 2014

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60-2014-07 SOLMAT-Neil GaAs QDFinal published version, 551 KBLicence: CC BY-NC-ND

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title = "Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements",

abstract = "The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.",

keywords = "InAs quantum dots, concentrator, solar cell",

author = "Neil Beattie and Guillaume Zoppi and Patrick See and Ian Farrer and Martial Duchamp and Dominique Morrison and Robert Miles and David Ritchie",

note = "Published online 26-8-2014 ahead of print.",

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T1 - Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements

AU - Beattie, Neil

AU - Zoppi, Guillaume

AU - See, Patrick

AU - Farrer, Ian

AU - Duchamp, Martial

AU - Morrison, Dominique

AU - Miles, Robert

AU - Ritchie, David

N1 - Published online 26-8-2014 ahead of print.

PY - 2014/11

Y1 - 2014/11

N2 - The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.

AB - The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.

KW - InAs quantum dots

KW - concentrator

KW - solar cell

U2 - 10.1016/j.solmat.2014.07.022

DO - 10.1016/j.solmat.2014.07.022

M3 - Article

SN - 0927-0248

VL - 130

SP - 241

EP - 245

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - SI

ER -

Analysis of InAs/GaAs quantum dot solar cells using Suns-Voc measurements

Abstract

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