TY - JOUR
T1 - Annealing effect on the physical properties of evaporated In2S3 films
AU - Revathi, Naidu
AU - Prathap, Pathi
AU - Miles, Robert
AU - Ramakrishna Reddy, Kotte
PY - 2010/9
Y1 - 2010/9
N2 - In2S3 films of different thicknesses were deposited onto Corning 7059 glass substrates using close spaced evaporation method, at a constant substrate temperature and growth rate of 300 °C and 30 Å/s, respectively. The deposited layers were then annealed in vacuum at temperatures (Ta) in the range 100–500 °C for 1 h and changes in the chemical and physical properties of the layers were investigated. The films annealed at Ta300 nm and annealing temperature of 300 °C. A highest optical transmittance was found to be 92% in the annealing temperature range, 300 °C
AB - In2S3 films of different thicknesses were deposited onto Corning 7059 glass substrates using close spaced evaporation method, at a constant substrate temperature and growth rate of 300 °C and 30 Å/s, respectively. The deposited layers were then annealed in vacuum at temperatures (Ta) in the range 100–500 °C for 1 h and changes in the chemical and physical properties of the layers were investigated. The films annealed at Ta300 nm and annealing temperature of 300 °C. A highest optical transmittance was found to be 92% in the annealing temperature range, 300 °C
KW - In2S3 films
KW - annealing effect
KW - chemical and physical properties
U2 - 10.1016/j.solmat.2010.02.044
DO - 10.1016/j.solmat.2010.02.044
M3 - Article
VL - 94
SP - 1487
EP - 1491
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 9
ER -