Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.
|Publication status||Published - 1993|
|Event||Twenty Third IEEE Photovoltaic Specialists Conference - Lousiville, KY|
Duration: 1 Jan 1993 → …
|Conference||Twenty Third IEEE Photovoltaic Specialists Conference|
|Period||1/01/93 → …|