Annealing of irradiation damage in epitaxial InP homojunction solar cells

Nicola Pearsall, Nicola Robson, H. Thomas, Jikui Luo, C. M. Hardingham, T. A. Cross

Research output: Contribution to conferencePaperpeer-review

Abstract

Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.
Original languageEnglish
DOIs
Publication statusPublished - 1993
EventTwenty Third IEEE Photovoltaic Specialists Conference - Lousiville, KY
Duration: 1 Jan 1993 → …

Conference

ConferenceTwenty Third IEEE Photovoltaic Specialists Conference
Period1/01/93 → …

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