Annealing of irradiation damage in epitaxial InP homojunction solar cells

Nicola Pearsall; Nicola Robson; H. Thomas; Jikui Luo; C. M. Hardingham; T. A. Cross

doi:10.1109/PVSC.1993.346904

Annealing of irradiation damage in epitaxial InP homojunction solar cells

Nicola Pearsall, Nicola Robson, H. Thomas, Jikui Luo, C. M. Hardingham, T. A. Cross

Research output: Contribution to conference › Paper › peer-review

Abstract

Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.

Original language	English
DOIs	https://doi.org/10.1109/PVSC.1993.346904
Publication status	Published - 1993
Event	Twenty Third IEEE Photovoltaic Specialists Conference - Lousiville, KY Duration: 1 Jan 1993 → …

Conference

Conference	Twenty Third IEEE Photovoltaic Specialists Conference
Period	1/01/93 → …

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.1993.346904

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@conference{51a918b0a4b34719a525f14753732b3d,

title = "Annealing of irradiation damage in epitaxial InP homojunction solar cells",

abstract = "Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.",

author = "Nicola Pearsall and Nicola Robson and H. Thomas and Jikui Luo and Hardingham, {C. M.} and Cross, {T. A.}",

year = "1993",

doi = "10.1109/PVSC.1993.346904",

language = "English",

note = "Twenty Third IEEE Photovoltaic Specialists Conference ; Conference date: 01-01-1993",

}

TY - CONF

T1 - Annealing of irradiation damage in epitaxial InP homojunction solar cells

AU - Pearsall, Nicola

AU - Robson, Nicola

AU - Thomas, H.

AU - Luo, Jikui

AU - Hardingham, C. M.

AU - Cross, T. A.

PY - 1993

Y1 - 1993

N2 - Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.

AB - Changes in performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterize the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room temperature, is considered.

U2 - 10.1109/PVSC.1993.346904

DO - 10.1109/PVSC.1993.346904

M3 - Paper

T2 - Twenty Third IEEE Photovoltaic Specialists Conference

Y2 - 1 January 1993

ER -

Annealing of irradiation damage in epitaxial InP homojunction solar cells

Abstract

Conference

UN SDGs

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