Abstract
Earth abundant Cu2SnS3 (CTS) films were fabricated on glass substrates using facile dip coating technique. For exploring the role of annealing temperature in the formation of CTS films, the deposited films were annealed in an inert atmosphere at various temperatures. XRD analysis confirmed the formation of Cu2SnS3 and its monoclinic structure was further identified by Raman spectroscopy. Hall measurements revealed the p–type nature of films and observed a carrier concentration of ∼ 1017 cm−3 for all the samples. High absorption coefficient value (α > 104 cm−1) and direct band gap in the range of 1.43 eV − 1.75 eV make the samples a suitable candidate in the field of photovoltaics. The influence of these process parameters on a solar cell based on CTS was analyzed by the SCAPS simulation program. At an annealing temperature of 475 °C, the simulated solar cell demonstrated the best power conversion efficiency PCE of 19.77 %.
Original language | English |
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Article number | 118003 |
Pages (from-to) | 1-10 |
Number of pages | 10 |
Journal | Materials Science and Engineering: B |
Volume | 314 |
Early online date | 13 Jan 2025 |
DOIs | |
Publication status | E-pub ahead of print - 13 Jan 2025 |
Keywords
- Cu2SnS3
- Dip coating
- Thin film solar cell
- SCAPS
- Simulation