CFD Modelling of Cadmium Telluride (CdTe) Thin Film Coating with Inline AP-MOCVD

Yiyi Wu; Xiao Gang Yang; Xiao Bing Huang; Vincent Barrioz; Shafiul Monir; Stuart Irvine; Giray Kartopu

doi:10.4028/www.scientific.net/AMM.217-219.1265

CFD Modelling of Cadmium Telluride (CdTe) Thin Film Coating with Inline AP-MOCVD

Yiyi Wu, Xiao Gang Yang, Xiao Bing Huang, Vincent Barrioz, Shafiul Monir, Stuart Irvine, Giray Kartopu

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A CFD numerical model has been established to study the growth of cadmium telluride (CdTe) on substrate using metalorganic chemical vapour deposition technique in atmospheric pressure (AP-MOCVD) and hydrodynamics in an inline MOCVD reactor. The numerical simulations have been conducted using the CFD code – ANSYS Fluent. Dimethylcadmium (DMCd) and diisopropyltelluride (DIPTe) have been employed as precursors while H2 is acting as the carrier gas. In order to assess the effect of various conditions on CdTe film growth and uniformity, heat transfer and mass transport behaviours of the chemical species in the reactor have been fully investigated. In addition, material utilization and fluid dynamics in the reactor are also discussed.

Original language	English
Pages (from-to)	1265-1273
Journal	Applied Mechanics and Materials
Volume	217-19
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.217-219.1265
Publication status	Published - 2012

Keywords

AP-MOCVD
Cadmium Telluride
CFD Modelling
Fluid Dynamic
Thin Film Coatings

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10.4028/www.scientific.net/AMM.217-219.1265

Cite this

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title = "CFD Modelling of Cadmium Telluride (CdTe) Thin Film Coating with Inline AP-MOCVD",

abstract = "A CFD numerical model has been established to study the growth of cadmium telluride (CdTe) on substrate using metalorganic chemical vapour deposition technique in atmospheric pressure (AP-MOCVD) and hydrodynamics in an inline MOCVD reactor. The numerical simulations have been conducted using the CFD code – ANSYS Fluent. Dimethylcadmium (DMCd) and diisopropyltelluride (DIPTe) have been employed as precursors while H2 is acting as the carrier gas. In order to assess the effect of various conditions on CdTe film growth and uniformity, heat transfer and mass transport behaviours of the chemical species in the reactor have been fully investigated. In addition, material utilization and fluid dynamics in the reactor are also discussed.",

keywords = "AP-MOCVD, Cadmium Telluride, CFD Modelling, Fluid Dynamic, Thin Film Coatings",

author = "Yiyi Wu and Yang, {Xiao Gang} and Huang, {Xiao Bing} and Vincent Barrioz and Shafiul Monir and Stuart Irvine and Giray Kartopu",

year = "2012",

doi = "10.4028/www.scientific.net/AMM.217-219.1265",

language = "English",

volume = "217-19",

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journal = "Applied Mechanics and Materials",

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T1 - CFD Modelling of Cadmium Telluride (CdTe) Thin Film Coating with Inline AP-MOCVD

AU - Wu, Yiyi

AU - Yang, Xiao Gang

AU - Huang, Xiao Bing

AU - Barrioz, Vincent

AU - Monir, Shafiul

AU - Irvine, Stuart

AU - Kartopu, Giray

PY - 2012

Y1 - 2012

N2 - A CFD numerical model has been established to study the growth of cadmium telluride (CdTe) on substrate using metalorganic chemical vapour deposition technique in atmospheric pressure (AP-MOCVD) and hydrodynamics in an inline MOCVD reactor. The numerical simulations have been conducted using the CFD code – ANSYS Fluent. Dimethylcadmium (DMCd) and diisopropyltelluride (DIPTe) have been employed as precursors while H2 is acting as the carrier gas. In order to assess the effect of various conditions on CdTe film growth and uniformity, heat transfer and mass transport behaviours of the chemical species in the reactor have been fully investigated. In addition, material utilization and fluid dynamics in the reactor are also discussed.

AB - A CFD numerical model has been established to study the growth of cadmium telluride (CdTe) on substrate using metalorganic chemical vapour deposition technique in atmospheric pressure (AP-MOCVD) and hydrodynamics in an inline MOCVD reactor. The numerical simulations have been conducted using the CFD code – ANSYS Fluent. Dimethylcadmium (DMCd) and diisopropyltelluride (DIPTe) have been employed as precursors while H2 is acting as the carrier gas. In order to assess the effect of various conditions on CdTe film growth and uniformity, heat transfer and mass transport behaviours of the chemical species in the reactor have been fully investigated. In addition, material utilization and fluid dynamics in the reactor are also discussed.

KW - AP-MOCVD

KW - Cadmium Telluride

KW - CFD Modelling

KW - Fluid Dynamic

KW - Thin Film Coatings

U2 - 10.4028/www.scientific.net/AMM.217-219.1265

DO - 10.4028/www.scientific.net/AMM.217-219.1265

M3 - Article

SN - 1662-7482

VL - 217-19

SP - 1265

EP - 1273

JO - Applied Mechanics and Materials

JF - Applied Mechanics and Materials

ER -

CFD Modelling of Cadmium Telluride (CdTe) Thin Film Coating with Inline AP-MOCVD

Abstract

Keywords

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