Chalcogenisation of Cu-Sb metallic precursors for thin film photovoltaic devices

Pietro Maiello, Guillaume Zoppi, Robert Miles, Nicola Pearsall, Ian Forbes

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, we report on the sulphurisation/selenisation of CuSb metallic precursors. The precursors were deposited by magnetron sputtering on molybdenum coated glass substrates from elemental targets. They were coated with an evaporated Se and/or S layer before annealing in a tube furnace at temperature of 500 °C. The thickness of the Se and S layers was adjusted to yield a range of compositions. The films were characterised by X-ray diffraction, secondary electron microscopy, secondary ion mass spectroscopy and photoelectrochemical measurements. Se-free films deposited on molybdenum/glass crystallised into Cu3SbS3 with a monoclinic structure. Chalcogenides converted at 500 °C showed p-type conductivity and energy band gaps varying from 1.2eV to 1.8eV depending on the S/Se ratio. Quantum efficiency curves were recorded over the spectral range 400-1300nm using a 3-electrode configuration in aqueous Eu(NO3)3. The measurements indicate that the films fabricated are photoactive and active junctions are formed.
Original languageEnglish
Publication statusPublished - 2011
Event26th European Photovoltaic Solar Energy Conference and Exhibition - Hamburg, Germany
Duration: 1 Jan 2011 → …
http://www.eupvsec-proceedings.com/

Conference

Conference26th European Photovoltaic Solar Energy Conference and Exhibition
Period1/01/11 → …
Internet address

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