Characterisation of Thin Films CuIn1-xAlxSe2 Prepared by Selenisation of Magnetron Sputtered Metallic Precursors

Guillaume Zoppi; Ian Forbes; Paresh Nasikkar; Robert Miles

doi:10.1557/PROC-1012-Y12-02

Characterisation of Thin Films CuIn1-xAlxSe2 Prepared by Selenisation of Magnetron Sputtered Metallic Precursors

Guillaume Zoppi, Ian Forbes, Paresh Nasikkar, Robert Miles

Mathematics, Physics and Electrical Engineering

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Abstract

Thin films of CuIn1-xAlxSe2 have been produced by the selenisation of magnetron sputtered Cu/In/Al precursor layers using elemental selenium and the chemical and physical properties of the layers have been determined for different conditions of synthesis. For optimum conditions of synthesis it was found possible to produce single phase films with the chalcopyrite structure. These films were pinhole free, had good adhesion and were conformal to the substrate. The films had uniform depth profiles as determined using the MiniSIMS. The layers were highly photoactive, indicating that they have the potential to be used to fabricate thin film photovoltaic solar cell devices.

Original language	English
Journal	MRS Proceedings
Volume	1012
DOIs	https://doi.org/10.1557/PROC-1012-Y12-02
Publication status	Published - 2007

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Zoppi 2007 Selenisation of Magnetron submittedSubmitted manuscript, 3.05 MB

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title = "Characterisation of Thin Films CuIn1-xAlxSe2 Prepared by Selenisation of Magnetron Sputtered Metallic Precursors",

abstract = "Thin films of CuIn1-xAlxSe2 have been produced by the selenisation of magnetron sputtered Cu/In/Al precursor layers using elemental selenium and the chemical and physical properties of the layers have been determined for different conditions of synthesis. For optimum conditions of synthesis it was found possible to produce single phase films with the chalcopyrite structure. These films were pinhole free, had good adhesion and were conformal to the substrate. The films had uniform depth profiles as determined using the MiniSIMS. The layers were highly photoactive, indicating that they have the potential to be used to fabricate thin film photovoltaic solar cell devices.",

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language = "English",

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AU - Miles, Robert

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N2 - Thin films of CuIn1-xAlxSe2 have been produced by the selenisation of magnetron sputtered Cu/In/Al precursor layers using elemental selenium and the chemical and physical properties of the layers have been determined for different conditions of synthesis. For optimum conditions of synthesis it was found possible to produce single phase films with the chalcopyrite structure. These films were pinhole free, had good adhesion and were conformal to the substrate. The films had uniform depth profiles as determined using the MiniSIMS. The layers were highly photoactive, indicating that they have the potential to be used to fabricate thin film photovoltaic solar cell devices.

AB - Thin films of CuIn1-xAlxSe2 have been produced by the selenisation of magnetron sputtered Cu/In/Al precursor layers using elemental selenium and the chemical and physical properties of the layers have been determined for different conditions of synthesis. For optimum conditions of synthesis it was found possible to produce single phase films with the chalcopyrite structure. These films were pinhole free, had good adhesion and were conformal to the substrate. The films had uniform depth profiles as determined using the MiniSIMS. The layers were highly photoactive, indicating that they have the potential to be used to fabricate thin film photovoltaic solar cell devices.

U2 - 10.1557/PROC-1012-Y12-02

DO - 10.1557/PROC-1012-Y12-02

M3 - Article

SN - 2059-8521

VL - 1012

JO - MRS Proceedings

JF - MRS Proceedings

ER -

Characterisation of Thin Films CuIn1-xAlxSe2 Prepared by Selenisation of Magnetron Sputtered Metallic Precursors

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