@inproceedings{7923cb2b7353409ba17852355c7ae552,
title = "Characterization and development of materials for an integrated high-temperature sensor using resistive test structures",
abstract = "This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of-150 ppm/°C which remains stable after 6 hours of annealing at 600°C.",
keywords = "High temperature, Sensors, Sheet resistance, Tantalum nitride, Temperature dependence, Test structures",
author = "A. Tabasnikov and Bunting, {A. S.} and Terry, {J. G.} and J. Murray and G. Cummins and C. Zhao and J. Zhou and Fu, {R. Y.} and Desmulliez, {M. P.Y.} and Walton, {A. J.} and S. Smith",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/ICMTS.2014.6841491",
language = "English",
isbn = "9781479921928",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "188--193",
booktitle = "2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings",
address = "United States",
note = "27th International Conference on Microelectronic Test Structures, ICMTS 2014 ; Conference date: 24-03-2014 Through 27-03-2014",
}