Characterization and development of materials for an integrated high-temperature sensor using resistive test structures

A. Tabasnikov, A. S. Bunting, J. G. Terry, J. Murray, G. Cummins, C. Zhao, J. Zhou, R. Y. Fu, M. P.Y. Desmulliez, A. J. Walton, S. Smith

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

This paper reports the application of test structures to the evaluation of tantalum nitride (Ta-N) as a material for integration with high temperature electronics. The test structure fabrication involves the reactive sputtering of Ta-N and its consequent annealing in a vacuum to reach the target specifications of low temperature coefficient of resistance (TCR). A test wafer has been designed to both evaluate the temperature performance of thin films and to study the possibility of integrating different metal films into a single sensing device. The Ta-N resistors resulting from this work have a TCR of-150 ppm/°C which remains stable after 6 hours of annealing at 600°C.

Original languageEnglish
Title of host publication2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages188-193
Number of pages6
ISBN (Print)9781479921928
DOIs
Publication statusPublished - 1 Jan 2014
Externally publishedYes
Event27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy
Duration: 24 Mar 201427 Mar 2014

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Conference

Conference27th International Conference on Microelectronic Test Structures, ICMTS 2014
CountryItaly
CityUdine
Period24/03/1427/03/14

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