Abstract
X-ray photoelectron spectroscopy (XPS) has been used to characterize the Si nanocrystals (nc-Si) incorporated in SiO2 by ion implantation and subsequent thermal annealing. XPS results suggest that the as-implanted films contain a composition of a few suboxide SiOx (x
| Original language | English |
|---|---|
| Pages (from-to) | 11-14 |
| Journal | Journal of Metastable and Nanocrystalline Materials |
| Volume | 23 |
| DOIs | |
| Publication status | Published - 2005 |
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