Charge-Carrier Mobility and Localization in Semiconducting Cu2AgBiI6 for Photovoltaic Applications

Leonardo R. V. Buizza, Adam D. Wright, Giulia Longo, Harry C. Sansom, Chelsea Q. Xia, Matthew J. Rosseinsky, Michael B. Johnston, Henry J. Snaith, Laura M. Herz*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)
35 Downloads (Pure)


Lead-free silver–bismuth semiconductors have become increasingly popular materials for optoelectronic applications, building upon the success of lead halide perovskites. In these materials, charge-lattice couplings fundamentally determine charge transport, critically affecting device performance. In this study, we investigate the optoelectronic properties of the recently discovered lead-free semiconductor Cu2AgBiI6 using temperature-dependent photoluminescence, absorption, and optical-pump terahertz-probe spectroscopy. We report ultrafast charge-carrier localization effects, evident from sharp THz photoconductivity decays occurring within a few picoseconds after excitation and a rise in intensity with decreasing temperature of long-lived, highly Stokes-shifted photoluminescence. We conclude that charge carriers in Cu2AgBiI6 are subject to strong charge-lattice coupling. However, such small polarons still exhibit mobilities in excess of 1 cm2 V–1 s–1 at room temperature because of low energetic barriers to formation and transport. Together with a low exciton binding energy of ∼29 meV and a direct band gap near 2.1 eV, these findings highlight Cu2AgBiI6 as an attractive lead-free material for photovoltaic applications.
Original languageEnglish
Pages (from-to)1729-1739
Number of pages11
JournalACS Energy Letters
Issue number5
Early online date7 Apr 2021
Publication statusPublished - 14 May 2021


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