Chemical analysis of Cd1−xZnxS/CdTe solar cells by plasma profiling TOFMS

Giray Kartopu; Agnès Tempez; Andrew Clayton; Vincent Barrioz; Stuart Irvine; Celia Olivero; Patrick Chapon; Sebastien Legendre; John Cooper

doi:10.1179/1433075X14Y.0000000207

Chemical analysis of Cd1−xZnxS/CdTe solar cells by plasma profiling TOFMS

Giray Kartopu, Agnès Tempez, Andrew Clayton, Vincent Barrioz, Stuart Irvine, Celia Olivero, Patrick Chapon, Sebastien Legendre, John Cooper

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Thin film CdTe photovoltaic (PV) devices and reference layers obtained by the atmospheric pressure metalorganic vapour deposition (AP-MOCVD) method have been studied for their chemical structure using plasma profiling time-of-flight-mass spectroscopy (PP-TOFMS, also called glow discharge TOFMS). Different levels of arsenic (As) dopant in CdTe films were measured by PP-TOFMS and compared to results obtained from a more conventional depth profiling method (secondary ion mass spectrometry or SIMS). This comparison showed that PP-TOFMS has the sufficient sensitivity towards detection of the As dopant in CdTe and hence is suited as a rapid, low vacuum tool in controlling the large scale production of CdTe PV materials.

Original language	English
Pages (from-to)	82-85
Journal	Materials Research Innovations
Volume	9
Issue number	1
DOIs	https://doi.org/10.1179/1433075X14Y.0000000207
Publication status	Published - Mar 2014

Keywords

CdTe thin film PV
Glow discharge
Plasma profiling (PP)-TOFMS
Depth profiling

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10.1179/1433075X14Y.0000000207

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title = "Chemical analysis of Cd1−xZnxS/CdTe solar cells by plasma profiling TOFMS",

abstract = "Thin film CdTe photovoltaic (PV) devices and reference layers obtained by the atmospheric pressure metalorganic vapour deposition (AP-MOCVD) method have been studied for their chemical structure using plasma profiling time-of-flight-mass spectroscopy (PP-TOFMS, also called glow discharge TOFMS). Different levels of arsenic (As) dopant in CdTe films were measured by PP-TOFMS and compared to results obtained from a more conventional depth profiling method (secondary ion mass spectrometry or SIMS). This comparison showed that PP-TOFMS has the sufficient sensitivity towards detection of the As dopant in CdTe and hence is suited as a rapid, low vacuum tool in controlling the large scale production of CdTe PV materials.",

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doi = "10.1179/1433075X14Y.0000000207",

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T1 - Chemical analysis of Cd1−xZnxS/CdTe solar cells by plasma profiling TOFMS

AU - Kartopu, Giray

AU - Tempez, Agnès

AU - Clayton, Andrew

AU - Barrioz, Vincent

AU - Irvine, Stuart

AU - Olivero, Celia

AU - Chapon, Patrick

AU - Legendre, Sebastien

AU - Cooper, John

PY - 2014/3

Y1 - 2014/3

N2 - Thin film CdTe photovoltaic (PV) devices and reference layers obtained by the atmospheric pressure metalorganic vapour deposition (AP-MOCVD) method have been studied for their chemical structure using plasma profiling time-of-flight-mass spectroscopy (PP-TOFMS, also called glow discharge TOFMS). Different levels of arsenic (As) dopant in CdTe films were measured by PP-TOFMS and compared to results obtained from a more conventional depth profiling method (secondary ion mass spectrometry or SIMS). This comparison showed that PP-TOFMS has the sufficient sensitivity towards detection of the As dopant in CdTe and hence is suited as a rapid, low vacuum tool in controlling the large scale production of CdTe PV materials.

AB - Thin film CdTe photovoltaic (PV) devices and reference layers obtained by the atmospheric pressure metalorganic vapour deposition (AP-MOCVD) method have been studied for their chemical structure using plasma profiling time-of-flight-mass spectroscopy (PP-TOFMS, also called glow discharge TOFMS). Different levels of arsenic (As) dopant in CdTe films were measured by PP-TOFMS and compared to results obtained from a more conventional depth profiling method (secondary ion mass spectrometry or SIMS). This comparison showed that PP-TOFMS has the sufficient sensitivity towards detection of the As dopant in CdTe and hence is suited as a rapid, low vacuum tool in controlling the large scale production of CdTe PV materials.

KW - CdTe thin film PV

KW - Glow discharge

KW - Plasma profiling (PP)-TOFMS

KW - Depth profiling

U2 - 10.1179/1433075X14Y.0000000207

DO - 10.1179/1433075X14Y.0000000207

M3 - Article

SN - 1432-8917

VL - 9

SP - 82

EP - 85

JO - Materials Research Innovations

JF - Materials Research Innovations

IS - 1

ER -

Chemical analysis of Cd1−xZnxS/CdTe solar cells by plasma profiling TOFMS

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Keywords

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