Comparative study of trap densities of states in CdTe∕CdS solar cells

Yuri Proskuryakov, Jonathan Major, Ken Durose, Vincent Barrioz, Stuart Irvine, Eurig Jones, Daniel Lamb

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Density of deep and shallow states has been investigated in three different kinds of CdTe∕CdS samples, two of which were grown by metal-organic chemical vapor deposition(MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were pdoped by As and grown either with or without a ZnObuffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.
Original languageEnglish
Pages (from-to)153505
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2007


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