Abstract
Density of deep and shallow states has been investigated in three different kinds of CdTe∕CdS samples, two of which were grown by metal-organic chemical vapor deposition(MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were pdoped by As and grown either with or without a ZnObuffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.
Original language | English |
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Pages (from-to) | 153505 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2007 |