Comparative study of trap densities of states in CdTe∕CdS solar cells

Yuri Proskuryakov; Jonathan Major; Ken Durose; Vincent Barrioz; Stuart Irvine; Eurig Jones; Daniel Lamb

doi:10.1063/1.2790778

Comparative study of trap densities of states in CdTe∕CdS solar cells

Yuri Proskuryakov, Jonathan Major, Ken Durose, Vincent Barrioz, Stuart Irvine, Eurig Jones, Daniel Lamb

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Density of deep and shallow states has been investigated in three different kinds of CdTe∕CdS samples, two of which were grown by metal-organic chemical vapor deposition(MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were pdoped by As and grown either with or without a ZnObuffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.

Original language	English
Pages (from-to)	153505
Journal	Applied Physics Letters
Volume	91
Issue number	15
DOIs	https://doi.org/10.1063/1.2790778
Publication status	Published - 2007

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1063/1.2790778

Cite this

@article{130aed8ad5ad4d5495dac37742e2f35c,

title = "Comparative study of trap densities of states in CdTe∕CdS solar cells",

abstract = "Density of deep and shallow states has been investigated in three different kinds of CdTe∕CdS samples, two of which were grown by metal-organic chemical vapor deposition(MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were pdoped by As and grown either with or without a ZnObuffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.",

author = "Yuri Proskuryakov and Jonathan Major and Ken Durose and Vincent Barrioz and Stuart Irvine and Eurig Jones and Daniel Lamb",

year = "2007",

doi = "10.1063/1.2790778",

language = "English",

volume = "91",

pages = "153505",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Comparative study of trap densities of states in CdTe∕CdS solar cells

AU - Proskuryakov, Yuri

AU - Major, Jonathan

AU - Durose, Ken

AU - Barrioz, Vincent

AU - Irvine, Stuart

AU - Jones, Eurig

AU - Lamb, Daniel

PY - 2007

Y1 - 2007

N2 - Density of deep and shallow states has been investigated in three different kinds of CdTe∕CdS samples, two of which were grown by metal-organic chemical vapor deposition(MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were pdoped by As and grown either with or without a ZnObuffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.

AB - Density of deep and shallow states has been investigated in three different kinds of CdTe∕CdS samples, two of which were grown by metal-organic chemical vapor deposition(MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were pdoped by As and grown either with or without a ZnObuffer layer between the transparent conductor and CdS layers. Capacitance-voltage, admittance spectroscopy, and quantum efficiency measurements show pronounced effects of As doping and ZnO incorporation. It is found that A centers and vacancies of Cd, usually observed in CSS devices, are absent in the defect spectra of MOCVD samples.

UR - https://www.scopus.com/pages/publications/35248861550

U2 - 10.1063/1.2790778

DO - 10.1063/1.2790778

M3 - Article

SN - 0003-6951

VL - 91

SP - 153505

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Comparative study of trap densities of states in CdTe∕CdS solar cells

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this