Abstract
The rapid development of the magnetic tunnel junction (MTJ) spin torque oscillator (STO) technology demands an analytical model to enable building MTJ STO-based circuits and systems so as to evaluate and utilize MTJ STOs in various applications. In Part I of this paper, an analytical model based on the macrospin approximation has been introduced and verified by comparing it with the measurements of three different MTJ STOs. In Part II, the full Verilog-A implementation of the proposed model is presented. To achieve a reliable model, an approach to reproducing the phase noise generated by the MTJ STO has been proposed and successfully employed. The implemented model yields a time domain signal, which retains the characteristics of operating frequency, linewidth, oscillation amplitude, and DC operating point, with respect to the magnetic field and applied DC current. The Verilog-A implementation is verified against the analytical model, providing equivalent device characteristics for the full range of biasing conditions. Furthermore, a system that includes an MTJ STO and CMOS RF circuits is simulated to validate the proposed model for system- and circuit-level designs. The simulation results demonstrate that the proposed model opens the possibility to explore STO technology in a wide range of applications.
Original language | English |
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Pages (from-to) | 1045-1051 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 3 |
Early online date | 29 Jan 2015 |
DOIs | |
Publication status | Published - Mar 2015 |
Externally published | Yes |
Keywords
- Analytical model
- macrospin
- magnetic tunnel junction (MTJ)
- spin torque oscillator (STO)