Conduction mechanisms in metal/self-assembled monolayer/metal junction

David Etor; Linzi E. Dodd; Claudio Balocco; David Wood

doi:10.1049/mnl.2018.5747

Conduction mechanisms in metal/self-assembled monolayer/metal junction

David Etor, Linzi E. Dodd, Claudio Balocco, David Wood

Mathematics, Physics and Electrical Engineering

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Abstract

The conduction mechanisms in metal-insulator-metal (MIM) junctions where the insulator consists of a self-assembled monolayer are investigated. Temperature dependence measurements from 2.5 to 300 K, show that the conduction is dominated by tunnelling only for temperatures below 20 K, while at higher temperatures surface-limited and bulk-limited mechanisms are observed. The experimental results are explained using a combination of direct (Simmons) tunnelling, Schottky emission, and Poole-Frenkel theory. Further insight is gained through numerical simulations based on the non-equilibrium Green-function formalism.

Original language	English
Pages (from-to)	808-811
Journal	Micro and Nano Letters
Volume	14
Issue number	7
Early online date	7 Mar 2019
DOIs	https://doi.org/10.1049/mnl.2018.5747
Publication status	Published - 26 Jun 2019

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Conduction mechanisms in metal self-assembled monolayer metal junctions_with minor correctionsAccepted author manuscript, 749 KB

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@article{ff9b39436a934e3db724643aff2256f3,

title = "Conduction mechanisms in metal/self-assembled monolayer/metal junction",

abstract = "The conduction mechanisms in metal-insulator-metal (MIM) junctions where the insulator consists of a self-assembled monolayer are investigated. Temperature dependence measurements from 2.5 to 300 K, show that the conduction is dominated by tunnelling only for temperatures below 20 K, while at higher temperatures surface-limited and bulk-limited mechanisms are observed. The experimental results are explained using a combination of direct (Simmons) tunnelling, Schottky emission, and Poole-Frenkel theory. Further insight is gained through numerical simulations based on the non-equilibrium Green-function formalism.",

keywords = "rectifier, electronic transport, self-assembly, current-conduction, temperature-dependence",

author = "David Etor and Dodd, {Linzi E.} and Claudio Balocco and David Wood",

year = "2019",

month = jun,

day = "26",

doi = "10.1049/mnl.2018.5747",

language = "English",

volume = "14",

pages = "808--811",

journal = "Micro and Nano Letters",

issn = "1750-0443",

publisher = "Institution of Engineering and Technology",

number = "7",

}

TY - JOUR

T1 - Conduction mechanisms in metal/self-assembled monolayer/metal junction

AU - Etor, David

AU - Dodd, Linzi E.

AU - Balocco, Claudio

AU - Wood, David

PY - 2019/6/26

Y1 - 2019/6/26

N2 - The conduction mechanisms in metal-insulator-metal (MIM) junctions where the insulator consists of a self-assembled monolayer are investigated. Temperature dependence measurements from 2.5 to 300 K, show that the conduction is dominated by tunnelling only for temperatures below 20 K, while at higher temperatures surface-limited and bulk-limited mechanisms are observed. The experimental results are explained using a combination of direct (Simmons) tunnelling, Schottky emission, and Poole-Frenkel theory. Further insight is gained through numerical simulations based on the non-equilibrium Green-function formalism.

AB - The conduction mechanisms in metal-insulator-metal (MIM) junctions where the insulator consists of a self-assembled monolayer are investigated. Temperature dependence measurements from 2.5 to 300 K, show that the conduction is dominated by tunnelling only for temperatures below 20 K, while at higher temperatures surface-limited and bulk-limited mechanisms are observed. The experimental results are explained using a combination of direct (Simmons) tunnelling, Schottky emission, and Poole-Frenkel theory. Further insight is gained through numerical simulations based on the non-equilibrium Green-function formalism.

KW - rectifier

KW - electronic transport

KW - self-assembly

KW - current-conduction

KW - temperature-dependence

U2 - 10.1049/mnl.2018.5747

DO - 10.1049/mnl.2018.5747

M3 - Article

VL - 14

SP - 808

EP - 811

JO - Micro and Nano Letters

JF - Micro and Nano Letters

SN - 1750-0443

IS - 7

ER -

Conduction mechanisms in metal/self-assembled monolayer/metal junction

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