Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes

L.E. Dodd, A.J. Gallant, David Wood

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The successful production, via two different oxidation processes, of metal-oxide-metal (MOM) diodes is presented. An innovative reactive ion etching and plasma assisted regrowth process has been used to provide oxides, which are in the thickness range 4.0?5.1 nm. These are thinner and physically more uniform than oxides grown in a furnace, resulting in diodes which should conduct via electron tunnelling across the MOM junction. Transmission electron microscopy analysis has been used in conjunction with time of flight secondary ion mass spectrometry analysis to verify oxide thickness and uniformity.
Original languageEnglish
Pages (from-to)476-478
Number of pages3
JournalMicro and nano letters.
Volume8
Issue number8
DOIs
Publication statusPublished - 1 Aug 2013

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