Creating metal saturated growth in MOCVD for CdTe solar cells

Stuart J.C. Irvine*, Ochai Oklobia, S. Jones, Daniel Ash Lamb, Giray Kartopu, Dingyuan Lu, Guohua Xiong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Determining the thermodynamic conditions in MOCVD growth of II-VI semiconductor materials is not as straightforward as in III-V growth where Group V hydrides are generally used. This paper establishes a technique, using in situ laser reflectometry, to ensure that the thermodynamic equilibrium is under metal saturated growth. This has been applied to the arsenic doping of CdTe solar cells where it was shown that increasing the II/VI precursor ratio resulted in an increase in As dopant incorporation. The growth kinetics were determined by the diisopropyl tellurium (DIPTe) concentration for II/VI precursor ratios above 2. A method is presented where the change in II/VI precursor ratio can be predicted for different positions in a horizontal MOCVD chamber that has, in turn, enabled variation in NA and the solar cell open circuit voltage (Voc) to be determined as a function of the II/VI precursor ratio. This gives new insight to the thermodynamic drivers in MOCVD growth for improved solar cell Voc and is a method that could be applied to MOCVD of other II-VI semiconductors.

Original languageEnglish
Article number127124
Number of pages5
JournalJournal of Crystal Growth
Volume607
Early online date2 Feb 2023
DOIs
Publication statusPublished - 1 Apr 2023

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