Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

K. Li; Yan Li; K. Y. Yu; C. Liu; Desmond Gibson; A. Leyland; A. Matthews; Yong Qing Fu

doi:10.1063/1.4948377

Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

K. Li, Yan Li, K. Y. Yu, C. Liu, Desmond Gibson, A. Leyland, A. Matthews, Yong Qing Fu

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Abstract

Ni41.7Ti38.8Nb19.5shape memoryalloyfilms were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.

Original language	English
Article number	171907
Journal	Applied Physics Letters
Volume	108
Issue number	17
Early online date	29 Apr 2016
DOIs	https://doi.org/10.1063/1.4948377
Publication status	Published - 29 Apr 2016

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title = "Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films",

abstract = "Ni41.7Ti38.8Nb19.5shape memoryalloyfilms were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.",

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AU - Li, K.

AU - Li, Yan

AU - Yu, K. Y.

AU - Liu, C.

AU - Gibson, Desmond

AU - Leyland, A.

AU - Matthews, A.

AU - Fu, Yong Qing

PY - 2016/4/29

Y1 - 2016/4/29

N2 - Ni41.7Ti38.8Nb19.5shape memoryalloyfilms were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.

AB - Ni41.7Ti38.8Nb19.5shape memoryalloyfilms were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.

UR - https://www.scopus.com/pages/publications/84968831186

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VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 171907

ER -

Crystal size induced reduction in thermal hysteresis of Ni-Ti-Nb shape memory thin films

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