Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

Kotte Ramakrishna Reddy; Vasudeva Reddy Minnam Reddy; Mark Leach; Kian Tan; Dongyoung Jang; Robert Miles

doi:10.1063/1.4710200

Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

Kotte Ramakrishna Reddy, Vasudeva Reddy Minnam Reddy, Mark Leach, Kian Tan, Dongyoung Jang, Robert Miles

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.

Original language	English
Pages (from-to)	709-710
Journal	AIP Conference Proceedings
Volume	1447
DOIs	https://doi.org/10.1063/1.4710200
Publication status	Published - 2011
Event	Department of Atomic Energy - Solid State Physics Symposium - SRM University, Tamilnadu, India Duration: 1 Dec 2011 → … http://www.srmuniv.ac.in/index.php

Keywords

annealing
crystal structure
crystallites
dislocation density
IV-VI semiconductors
semiconductor growth
semiconductor thin films
solar cells
sputter deposition
thin film devices
tin compounds

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S",

abstract = "Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.",

keywords = "annealing, crystal structure, crystallites, dislocation density, IV-VI semiconductors, semiconductor growth, semiconductor thin films, solar cells, sputter deposition, thin film devices, tin compounds",

author = "{Ramakrishna Reddy}, Kotte and Reddy, {Vasudeva Reddy Minnam} and Mark Leach and Kian Tan and Dongyoung Jang and Robert Miles",

note = "Solid State Physics: Proceedings of the 56th DAE Solid State Physics Symposium 2011, 19-23 December 2011, SRM University, Kattankulathur, Tamilnadu, India.; Department of Atomic Energy - Solid State Physics Symposium ; Conference date: 01-12-2011",

year = "2011",

doi = "10.1063/1.4710200",

language = "English",

volume = "1447",

pages = "709--710",

journal = "AIP Conference Proceedings",

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publisher = "American Institute of Physics",

url = "http://www.srmuniv.ac.in/index.php",

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TY - JOUR

T1 - Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

AU - Ramakrishna Reddy, Kotte

AU - Reddy, Vasudeva Reddy Minnam

AU - Leach, Mark

AU - Tan, Kian

AU - Jang, Dongyoung

AU - Miles, Robert

N1 - Solid State Physics: Proceedings of the 56th DAE Solid State Physics Symposium 2011, 19-23 December 2011, SRM University, Kattankulathur, Tamilnadu, India.

PY - 2011

Y1 - 2011

N2 - Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.

AB - Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.

KW - annealing

KW - crystal structure

KW - crystallites

KW - dislocation density

KW - IV-VI semiconductors

KW - semiconductor growth

KW - semiconductor thin films

KW - solar cells

KW - sputter deposition

KW - thin film devices

KW - tin compounds

U2 - 10.1063/1.4710200

DO - 10.1063/1.4710200

M3 - Article

SN - 0094-243X

VL - 1447

SP - 709

EP - 710

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

T2 - Department of Atomic Energy - Solid State Physics Symposium

Y2 - 1 December 2011

ER -

Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

Abstract

Keywords

UN SDGs

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