Crystalline behaviour of SnS layers produced by sulfurization of Sn films using H2S

Kotte Ramakrishna Reddy, Vasudeva Reddy Minnam Reddy, Mark Leach, Kian Tan, Dongyoung Jang, Robert Miles

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450°C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.
Original languageEnglish
Pages (from-to)709-710
JournalAIP Conference Proceedings
Volume1447
DOIs
Publication statusPublished - 2011
EventDepartment of Atomic Energy - Solid State Physics Symposium - SRM University, Tamilnadu, India
Duration: 1 Dec 2011 → …
http://www.srmuniv.ac.in/index.php

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