CuInAl metallic precursor films were selenised at different temperatures and the migration of the elements investigated. GD-OES was used to determine the elemental depth profiles, and XRD analysis gave an insight into the phase transformations taking place. These combined techniques made it possible to study the diffusion and reaction processes taking place during the selenisation stage. Post selenisation annealing was also investigated, which led to partial incorporation of the Al into the CuInSe2 lattice.
|Publication status||Published - 2012|
|Event||8th Photovoltaic Science Applications and Technology (PVSAT-8) conference - Northumbria University, Newcastle upon Tyne|
Duration: 1 Jan 2012 → …
|Conference||8th Photovoltaic Science Applications and Technology (PVSAT-8) conference|
|Period||1/01/12 → …|