Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

Devendra Tiwari; Tapas K. Chaudhuri; Arabinda Ray; Krishan Dutt Tiwari

doi:10.1016/j.tsf.2013.11.095

Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

Devendra Tiwari^*, Tapas K. Chaudhuri, Arabinda Ray, Krishan Dutt Tiwari

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

A process for deposition of Cu2ZnSnS4 (CZTS) films using replacement of Zn2 + in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 1017 cm− 3 and 1.4 cm2V− 1 s− 1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO2:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm2, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region.

Original language	English
Pages (from-to)	42-45
Number of pages	4
Journal	Thin Solid Films
Volume	551
Early online date	1 Dec 2013
DOIs	https://doi.org/10.1016/j.tsf.2013.11.095
Publication status	Published - 31 Jan 2014
Externally published	Yes

Keywords

Replacement reaction
Copper zinc tin sulfide
Thin film solar cells
Solution deposition

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.tsf.2013.11.095

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@article{902a623abf4c429a80637508db17ecb8,

title = "Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application",

abstract = "A process for deposition of Cu2ZnSnS4 (CZTS) films using replacement of Zn2 + in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 1017 cm− 3 and 1.4 cm2V− 1 s− 1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO2:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm2, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region.",

keywords = "Replacement reaction, Copper zinc tin sulfide, Thin film solar cells, Solution deposition",

author = "Devendra Tiwari and Chaudhuri, {Tapas K.} and Arabinda Ray and Tiwari, {Krishan Dutt}",

year = "2014",

month = jan,

day = "31",

doi = "10.1016/j.tsf.2013.11.095",

language = "English",

volume = "551",

pages = "42--45",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

AU - Tiwari, Devendra

AU - Chaudhuri, Tapas K.

AU - Ray, Arabinda

AU - Tiwari, Krishan Dutt

PY - 2014/1/31

Y1 - 2014/1/31

N2 - A process for deposition of Cu2ZnSnS4 (CZTS) films using replacement of Zn2 + in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 1017 cm− 3 and 1.4 cm2V− 1 s− 1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO2:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm2, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region.

AB - A process for deposition of Cu2ZnSnS4 (CZTS) films using replacement of Zn2 + in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 1017 cm− 3 and 1.4 cm2V− 1 s− 1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO2:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm2, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region.

KW - Replacement reaction

KW - Copper zinc tin sulfide

KW - Thin film solar cells

KW - Solution deposition

U2 - 10.1016/j.tsf.2013.11.095

DO - 10.1016/j.tsf.2013.11.095

M3 - Article

SN - 0040-6090

VL - 551

SP - 42

EP - 45

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

Abstract

Keywords

UN SDGs

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