Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Guillaume Zoppi; Ian Forbes; Robert Miles; Phillip Dale; Jonathan Scragg; Laurence Peter

doi:10.1002/pip.886

Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Guillaume Zoppi, Ian Forbes, Robert Miles, Phillip Dale, Jonathan Scragg, Laurence Peter

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

296 Citations (Scopus)

Abstract

Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 Å and c = 11•353 Å) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2% measured under standard AM1•5 illumination

Original language	English
Pages (from-to)	315-319
Journal	Progress in Photovoltaics: Research and Applications
Volume	17
Issue number	5
DOIs	https://doi.org/10.1002/pip.886
Publication status	Published - 1 Aug 2009

Keywords

selenisation
sputtering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pip.886

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@article{092c4b1525fb43a0a05e45e6a1ca1465,

title = "Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors",

abstract = "Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 {\AA} and c = 11•353 {\AA}) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2% measured under standard AM1•5 illumination",

keywords = "selenisation, sputtering",

author = "Guillaume Zoppi and Ian Forbes and Robert Miles and Phillip Dale and Jonathan Scragg and Laurence Peter",

year = "2009",

month = aug,

day = "1",

doi = "10.1002/pip.886",

language = "English",

volume = "17",

pages = "315--319",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

publisher = "Blackwell Publishing",

number = "5",

}

TY - JOUR

T1 - Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

AU - Zoppi, Guillaume

AU - Forbes, Ian

AU - Miles, Robert

AU - Dale, Phillip

AU - Scragg, Jonathan

AU - Peter, Laurence

PY - 2009/8/1

Y1 - 2009/8/1

N2 - Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 Å and c = 11•353 Å) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2% measured under standard AM1•5 illumination

AB - Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 Å and c = 11•353 Å) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2% measured under standard AM1•5 illumination

KW - selenisation

KW - sputtering

U2 - 10.1002/pip.886

DO - 10.1002/pip.886

M3 - Article

SN - 1062-7995

VL - 17

SP - 315

EP - 319

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 5

ER -

Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Abstract

Keywords

UN SDGs

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