Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Guillaume Zoppi; Ian Forbes; Robert Miles; Phillip Dale; Jonathan Scragg; Laurence Peter

doi:10.1002/pip.886

Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Guillaume Zoppi, Ian Forbes, Robert Miles, Phillip Dale, Jonathan Scragg, Laurence Peter

Research output: Contribution to journal › Article › peer-review

297 Citations (Scopus)

Abstract

Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 Å and c = 11•353 Å) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2% measured under standard AM1•5 illumination

Original language	English
Pages (from-to)	315-319
Journal	Progress in Photovoltaics: Research and Applications
Volume	17
Issue number	5
DOIs	https://doi.org/10.1002/pip.886
Publication status	Published - 1 Aug 2009

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

selenisation
sputtering

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10.1002/pip.886

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title = "Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors",

abstract = "Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 {\AA} and c = 11•353 {\AA}) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2\% measured under standard AM1•5 illumination",

keywords = "selenisation, sputtering",

author = "Guillaume Zoppi and Ian Forbes and Robert Miles and Phillip Dale and Jonathan Scragg and Laurence Peter",

year = "2009",

month = aug,

day = "1",

doi = "10.1002/pip.886",

language = "English",

volume = "17",

pages = "315--319",

journal = "Progress in Photovoltaics: Research and Applications",

issn = "1062-7995",

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TY - JOUR

T1 - Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

AU - Zoppi, Guillaume

AU - Forbes, Ian

AU - Miles, Robert

AU - Dale, Phillip

AU - Scragg, Jonathan

AU - Peter, Laurence

PY - 2009/8/1

Y1 - 2009/8/1

N2 - Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 Å and c = 11•353 Å) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2% measured under standard AM1•5 illumination

AB - Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p-type CZTSe absorber films were found to crystallize in the stannite structure (a = 5•684 Å and c = 11•353 Å) with an electronic bandgap of 0•9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3•2% measured under standard AM1•5 illumination

KW - selenisation

KW - sputtering

UR - https://www.scopus.com/pages/publications/67650113047

U2 - 10.1002/pip.886

DO - 10.1002/pip.886

M3 - Article

SN - 1062-7995

VL - 17

SP - 315

EP - 319

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 5

ER -

Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Abstract

UN SDGs

Keywords

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