Abstract
Deep reactive ion etching (DRIE) is investigated as a tool for the realization of nanostructures and architectures, including nanopillars,siliconnanowires or carbon nanotubes on Si nanopillars, nanowalls, and nanonetworks. The potential of combining top-down fabrication methods with the bottom-up synthesis of one-dimensional nanocomponents is assessed. The field-emission properties of carbon nanotubes/Si pillars hybrid structures are measured, as well as the transport properties of large-area nanowires obtained via nanowire lithography. The potential of DRIE for the fabrication of three-dimensional nanostructures is also revealed.
Original language | English |
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Pages (from-to) | 1520 |
Journal | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
Volume | 27 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 |