Press-pack Insulated Gate Bipolar Transistors (PP IGBT) are becoming increasingly used in HVDC and FACT applications. Due to its unique packaging, its reliability issues have also attracted increasing attention in the engineering field. More comprehensive investigation into the thermal, electrical and mechanical factors should be conducted to reveal the operation condition and status of the devices. The objective of this work is to study the relationship among the deformation of the collector groove and the thermal stress of the chip as well as the contact pressure by simulating the PP IGBT under normal and abnormal conditions. A sophisticated 3D finite element (FE) model of a PP IGBT has been developed which includes the coupling with thermal-mechanical effect. Also, the influence of different pressure and thermal stress on deformation is discussed thoroughly that can provide insight of how to monitor the status of a PP IGBT from the perspective of deformation.
|Number of pages||12|
|Publication status||Accepted/In press - 26 Aug 2021|
|Event||2021 International Joint Conference on Energy, Electrical and Power Engineering - Huanshan, China|
Duration: 5 Nov 2021 → 7 Nov 2021
|Conference||2021 International Joint Conference on Energy, Electrical and Power Engineering|
|Abbreviated title||CoEEPE 2021|
|Period||5/11/21 → 7/11/21|