Deposition and characterization of sputtered ZnO films

W. L. Dang, Yong Qing Fu, J. K. Luo, Andrew Flewitt, William Milne

Research output: Contribution to journalArticlepeer-review

110 Citations (Scopus)


Zinc oxide thin films were deposited by radio frequency magnetron sputtering at room temperature using a metallic zinc target in a gas mixture of argon and oxygen. Plasma power, oxygen /argon gas ratio, gas pressure, and substrate temperature were varied, and an experimental design method was used to optimize these deposition parameters by considering their interdependence. Crystalline structures and film stresses were examined. Post-deposition rapid thermal annealing was also carried out to observe its effects on the film properties. Statistical analysis was then used to find the optimal sputtering conditions. Results indicated that plasma power and gas pressure have the largest effects on film crystallization and stress and that postdeposition annealing can be used to improve the quality of the film properties.
Original languageEnglish
Pages (from-to)89-93
JournalSuperlattices and Microstructures
Issue number1-6
Publication statusPublished - 2007


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