Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

N. S. Beattie, P. See, G. Zoppi, P. M. Ushasree, M. Duchamp, I. Farrer, V. Donchev, D. A. Ritchie, S. Tomić

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2747-2751
Number of pages5
ISBN (Electronic)9781538685297
ISBN (Print)9781538685303
DOIs
Publication statusPublished - 29 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Fingerprint

Dive into the research topics of 'Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering'. Together they form a unique fingerprint.

Cite this