Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

N. S. Beattie; P. See; G. Zoppi; P. M. Ushasree; M. Duchamp; I. Farrer; V. Donchev; D. A. Ritchie; S. Tomić

doi:10.1109/PVSC.2018.8547630

Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

N. S. Beattie, P. See, G. Zoppi, P. M. Ushasree, M. Duchamp, I. Farrer, V. Donchev, D. A. Ritchie, S. Tomić

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Citations (Scopus)

Abstract

The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	IEEE
Pages	2747-2751
Number of pages	5
ISBN (Electronic)	9781538685297
ISBN (Print)	9781538685303
DOIs	https://doi.org/10.1109/PVSC.2018.8547630
Publication status	Published - 29 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

High Efficiency
Intermediate Band Solar Cell
Photovoltaics
QDs

Access to Document

10.1109/PVSC.2018.8547630

Cite this

Beattie, N. S., See, P., Zoppi, G., Ushasree, P. M., Duchamp, M., Farrer, I., Donchev, V., Ritchie, D. A., & Tomić, S. (2018). Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 2747-2751). IEEE. https://doi.org/10.1109/PVSC.2018.8547630

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title = "Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering",

abstract = "The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3\% (19.7\%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.",

keywords = "High Efficiency, Intermediate Band Solar Cell, Photovoltaics, QDs",

author = "Beattie, \{N. S.\} and P. See and G. Zoppi and Ushasree, \{P. M.\} and M. Duchamp and I. Farrer and V. Donchev and Ritchie, \{D. A.\} and S. Tomi{\'c}",

year = "2018",

month = nov,

day = "29",

doi = "10.1109/PVSC.2018.8547630",

language = "English",

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booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "IEEE",

address = "United States",

note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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Beattie, NS, See, P, Zoppi, G, Ushasree, PM, Duchamp, M, Farrer, I, Donchev, V, Ritchie, DA & Tomić, S 2018, Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. IEEE, pp. 2747-2751, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18. https://doi.org/10.1109/PVSC.2018.8547630

Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering. / Beattie, N. S.; See, P.; Zoppi, G. et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. IEEE, 2018. p. 2747-2751.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

AU - Beattie, N. S.

AU - See, P.

AU - Zoppi, G.

AU - Ushasree, P. M.

AU - Duchamp, M.

AU - Farrer, I.

AU - Donchev, V.

AU - Ritchie, D. A.

AU - Tomić, S.

PY - 2018/11/29

Y1 - 2018/11/29

N2 - The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.

AB - The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.

KW - High Efficiency

KW - Intermediate Band Solar Cell

KW - Photovoltaics

KW - QDs

UR - https://www.scopus.com/pages/publications/85059902381

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DO - 10.1109/PVSC.2018.8547630

M3 - Conference contribution

AN - SCOPUS:85059902381

SN - 9781538685303

SP - 2747

EP - 2751

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - IEEE

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Beattie NS, See P, Zoppi G, Ushasree PM, Duchamp M, Farrer I et al. Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. IEEE. 2018. p. 2747-2751 doi: 10.1109/PVSC.2018.8547630

Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

Abstract

Conference

UN SDGs

Keywords

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