Detection of single photons using a field effect transistor with a layer of quantum dots

Beata Kardynał, Andrew Shields, Martin O'Sullivan, Neil Beattie, Ian Farrer, David Ritchie, Ken Cooper

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We demonstrate single-photon detection with a GaAs/AlGaAs modulation-doped field effect transistor. High sensitivity of the transistor to light is obtained by incorporating in its structure a layer of self-organized InAs quantum dots in close proximity to the conducting channel but separated by a thin AlGaAs barrier. We show that capture of a single photoexcited carrier by a quantum dot results in a sizeable change in the source–drain current of the transistor, allowing the detection of a single photon.
Original languageEnglish
Pages (from-to)1721-1726
JournalMeasurement Science and Technology
Volume13
Issue number11
DOIs
Publication statusPublished - 2002

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