Determination of the minority carrier diffusion length of SnS using electro-optical measurements

The minority carrier diffusion length has been identified as one of the most important parameters that governs the performance of a solar cell device. In this work thin films of SnS have been grown by the thermal evaporation of high purity tin sulphide onto cadmium sulphide/indium tin oxide/ glass substrates to fabricate heterojunction solar cell devices. The chemical and physical properties of the SnS were optimised by varying the source and substrate temperatures, the deposition time and by post-deposition annealing of the samples. The material properties of the SnS were investigated using scanning electron microscopy (SEM), energy dispersive x-ray analysis (EDAX), x-ray diffractometry (XRD), spectro-photometry and using electrical measurements. The minority carrier diffusion length was determined using spectral response and capacitance-voltage based measurements.