Development of phase shift lithography for the production of metal-oxide-metal diodes

L.E. Dodd; M.C. Rosamond; A.J. Gallant; David Wood

doi:10.1049/mnl.2014.0102

Development of phase shift lithography for the production of metal-oxide-metal diodes

L.E. Dodd, M.C. Rosamond, A.J. Gallant, David Wood

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.

Original language	English
Pages (from-to)	437-440
Number of pages	4
Journal	Micro and nano letters.
Volume	9
Issue number	7
DOIs	https://doi.org/10.1049/mnl.2014.0102
Publication status	Published - 1 Jul 2014

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10.1049/mnl.2014.0102

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@article{704c140efafb4fb899552412a6763219,

title = "Development of phase shift lithography for the production of metal-oxide-metal diodes",

abstract = "Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.",

author = "L.E. Dodd and M.C. Rosamond and A.J. Gallant and David Wood",

year = "2014",

month = jul,

day = "1",

doi = "10.1049/mnl.2014.0102",

language = "English",

volume = "9",

pages = "437--440",

journal = "Micro and nano letters.",

issn = "1750-0443",

publisher = "Blackwell Publishing",

number = "7",

}

TY - JOUR

T1 - Development of phase shift lithography for the production of metal-oxide-metal diodes

AU - Dodd, L.E.

AU - Rosamond, M.C.

AU - Gallant, A.J.

AU - Wood, David

PY - 2014/7/1

Y1 - 2014/7/1

N2 - Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.

AB - Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.

UR - https://www.scopus.com/pages/publications/84905226374

U2 - 10.1049/mnl.2014.0102

DO - 10.1049/mnl.2014.0102

M3 - Article

SN - 1750-0443

VL - 9

SP - 437

EP - 440

JO - Micro and nano letters.

JF - Micro and nano letters.

IS - 7

ER -

Development of phase shift lithography for the production of metal-oxide-metal diodes

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