Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices

Yuri Proskuryakov; Ken Durose; Jonathan Major; Mohammed Al Turkestani; Vincent Barrioz; Stuart Irvine; Eurig Jones

doi:10.1016/j.solmat.2009.04.010

Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices

Yuri Proskuryakov, Ken Durose, Jonathan Major, Mohammed Al Turkestani, Vincent Barrioz, Stuart Irvine, Eurig Jones

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Doping, compensation and photovoltaic performance have been investigated in all-metal-organic vapour-phase deposition (MOCVD) grown CdTe/CdS solar cells that were co-doped with arsenic and chlorine. Although arsenic chemical concentration is in the range of 1017–1.5×1019 cm−3, the maximum net acceptor concentration is only in the order of 1014 cm−3, as determined by capacitance–voltage characteristics. Admittance spectroscopy revealed shallow traps at 0.055 eV which were attributed to AsTe; its compensation by Cdi is discussed. Formation of the alloy CdSxTe1−x is linked to deep levels at EV+∼0.55 eV and EV+∼0.65 eV. Limits to the diffusion of photo-generated carriers were considered to be important in determining photovoltaic performance rather than carrier lifetime. Prospects for optimizing the performance of such co-doped MOCVD-grown devices are discussed.

Original language	English
Pages (from-to)	1572-1581
Journal	Solar Energy Materials and Solar Cells
Volume	93
Issue number	9
DOIs	https://doi.org/10.1016/j.solmat.2009.04.010
Publication status	Published - Sept 2009

Keywords

Thin film solar cells
CdTe
MOCVD
Doping
Electrical properties

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2009.04.010

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title = "Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices",

abstract = "Doping, compensation and photovoltaic performance have been investigated in all-metal-organic vapour-phase deposition (MOCVD) grown CdTe/CdS solar cells that were co-doped with arsenic and chlorine. Although arsenic chemical concentration is in the range of 1017–1.5×1019 cm−3, the maximum net acceptor concentration is only in the order of 1014 cm−3, as determined by capacitance–voltage characteristics. Admittance spectroscopy revealed shallow traps at 0.055 eV which were attributed to AsTe; its compensation by Cdi is discussed. Formation of the alloy CdSxTe1−x is linked to deep levels at EV+∼0.55 eV and EV+∼0.65 eV. Limits to the diffusion of photo-generated carriers were considered to be important in determining photovoltaic performance rather than carrier lifetime. Prospects for optimizing the performance of such co-doped MOCVD-grown devices are discussed.",

keywords = "Thin film solar cells, CdTe, MOCVD, Doping, Electrical properties",

author = "Yuri Proskuryakov and Ken Durose and Jonathan Major and {Al Turkestani}, Mohammed and Vincent Barrioz and Stuart Irvine and Eurig Jones",

year = "2009",

month = sep,

doi = "10.1016/j.solmat.2009.04.010",

language = "English",

volume = "93",

pages = "1572--1581",

journal = "Solar Energy Materials and Solar Cells",

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TY - JOUR

T1 - Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices

AU - Proskuryakov, Yuri

AU - Durose, Ken

AU - Major, Jonathan

AU - Al Turkestani, Mohammed

AU - Barrioz, Vincent

AU - Irvine, Stuart

AU - Jones, Eurig

PY - 2009/9

Y1 - 2009/9

N2 - Doping, compensation and photovoltaic performance have been investigated in all-metal-organic vapour-phase deposition (MOCVD) grown CdTe/CdS solar cells that were co-doped with arsenic and chlorine. Although arsenic chemical concentration is in the range of 1017–1.5×1019 cm−3, the maximum net acceptor concentration is only in the order of 1014 cm−3, as determined by capacitance–voltage characteristics. Admittance spectroscopy revealed shallow traps at 0.055 eV which were attributed to AsTe; its compensation by Cdi is discussed. Formation of the alloy CdSxTe1−x is linked to deep levels at EV+∼0.55 eV and EV+∼0.65 eV. Limits to the diffusion of photo-generated carriers were considered to be important in determining photovoltaic performance rather than carrier lifetime. Prospects for optimizing the performance of such co-doped MOCVD-grown devices are discussed.

AB - Doping, compensation and photovoltaic performance have been investigated in all-metal-organic vapour-phase deposition (MOCVD) grown CdTe/CdS solar cells that were co-doped with arsenic and chlorine. Although arsenic chemical concentration is in the range of 1017–1.5×1019 cm−3, the maximum net acceptor concentration is only in the order of 1014 cm−3, as determined by capacitance–voltage characteristics. Admittance spectroscopy revealed shallow traps at 0.055 eV which were attributed to AsTe; its compensation by Cdi is discussed. Formation of the alloy CdSxTe1−x is linked to deep levels at EV+∼0.55 eV and EV+∼0.65 eV. Limits to the diffusion of photo-generated carriers were considered to be important in determining photovoltaic performance rather than carrier lifetime. Prospects for optimizing the performance of such co-doped MOCVD-grown devices are discussed.

KW - Thin film solar cells

KW - CdTe

KW - MOCVD

KW - Doping

KW - Electrical properties

U2 - 10.1016/j.solmat.2009.04.010

DO - 10.1016/j.solmat.2009.04.010

M3 - Article

SN - 0927-0248

VL - 93

SP - 1572

EP - 1581

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 9

ER -

Doping levels, trap density of states and the performance of co-doped CdTe(As,Cl) photovoltaic devices

Abstract

Keywords

UN SDGs

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