TY - JOUR
T1 - Effect of Helium-Implanted Edge Termination on GaN-on-GaN Schottky Barrier Diode Temperature Sensors
AU - Li, Xiaobo
AU - Lin, Feng
AU - Pu, Taofei
AU - Li, Xicong
AU - Li, Bo
AU - Li, Shuai
AU - Han, Jiajun
AU - Wang, Xinzhong
AU - Lu, Youming
AU - Liu, Xinke
N1 - Funding information: This work was supported in part by the National Natural Science Foundation of China under Grant 61974144 and Grant 62004127; in part
by the Key-Area Research and Development Program of Guangdong Province under grant 2020B010169001; in part by the Guangdong Science Foundation for Distinguished Young Scholars under Grant 2022B1515020073; in part by the Shenzhen Science and Technology Program under Grant JCYJ20220818102809020; and in part by the Science and Technology Program of Ningbo, China, under Grant
2019B10129.
PY - 2023/12/15
Y1 - 2023/12/15
N2 - This study investigates the effect of helium-implanted edge termination (ET) on GaN-on-GaN Schottky barrier diode (SBD) temperature sensors. Devices with and without ET of three different diameters are fabricated and characterized from 298 to 473 K. Based on the conventional calculation method, the results show that the sensitivity (Sm) of the device with ET is lower than that of the device without ET at the same given current with the same anode area. Technology Computer Aided Design (TCAD) simulation reveals that ET can restrict the current to a smaller area, resulting in a larger actual current density (JA) for devices with ET. After correcting (JA) in the sensitivity calculation, the two types of devices exhibit the same corrected sensitivity (Sc) values, which also follow the fundamental linearity theory of sensitivity versus the natural logarithm of JA with high sensitivity corresponding to the lower current density. This pseudo-degradation phenomenon of sensitivity after the ET process can serve as a reference for in situ temperature monitoring in the gallium nitride (GaN)-based integrated-circuit design.
AB - This study investigates the effect of helium-implanted edge termination (ET) on GaN-on-GaN Schottky barrier diode (SBD) temperature sensors. Devices with and without ET of three different diameters are fabricated and characterized from 298 to 473 K. Based on the conventional calculation method, the results show that the sensitivity (Sm) of the device with ET is lower than that of the device without ET at the same given current with the same anode area. Technology Computer Aided Design (TCAD) simulation reveals that ET can restrict the current to a smaller area, resulting in a larger actual current density (JA) for devices with ET. After correcting (JA) in the sensitivity calculation, the two types of devices exhibit the same corrected sensitivity (Sc) values, which also follow the fundamental linearity theory of sensitivity versus the natural logarithm of JA with high sensitivity corresponding to the lower current density. This pseudo-degradation phenomenon of sensitivity after the ET process can serve as a reference for in situ temperature monitoring in the gallium nitride (GaN)-based integrated-circuit design.
UR - https://www.scopus.com/pages/publications/85180269197
U2 - 10.1109/jsen.2023.3325663
DO - 10.1109/jsen.2023.3325663
M3 - Article
SN - 1530-437X
VL - 23
SP - 30112
EP - 30118
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 24
ER -