Effective n-type doping strategy through codoping SiAl–FNin aluminum nitride

Zhiguo Wang, Jingbo Li, Yong Qing Fu

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2 Citations (Scopus)

Abstract

Using a first-principles pseudopotential method, we studied an effective n-type doping strategy through codoping SiAl–XN (X = F, Cl, Br, and I) in aluminum nitride. Results revealed that the donor ionization energy of the SiAl–XN complex is much lower than that of the corresponding isolated SiAl impurity. Theoretically obtained ε(+/0) ionization energies are all near the conduction band minimum (CBM), which is only 1.4 meV below the CBM of the SiAl–FN pair. The low ε(+/0) ionization energy of the SiAl–XN complex can be explained by the combined repulsion between the X element (X = F, Cl, Br, and I)- and Si donor-induced levels.
Original languageEnglish
Pages (from-to)111004
JournalApplied Physics Express
Volume7
Issue number11
DOIs
Publication statusPublished - 7 Nov 2014

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