TY - JOUR
T1 - Effective n-type doping strategy through codoping SiAl–FNin aluminum nitride
AU - Wang, Zhiguo
AU - Li, Jingbo
AU - Fu, Yong Qing
PY - 2014/11/7
Y1 - 2014/11/7
N2 - Using a first-principles pseudopotential method, we studied an effective n-type doping strategy through codoping SiAl–XN (X = F, Cl, Br, and I) in aluminum nitride. Results revealed that the donor ionization energy of the SiAl–XN complex is much lower than that of the corresponding isolated SiAl impurity. Theoretically obtained ε(+/0) ionization energies are all near the conduction band minimum (CBM), which is only 1.4 meV below the CBM of the SiAl–FN pair. The low ε(+/0) ionization energy of the SiAl–XN complex can be explained by the combined repulsion between the X element (X = F, Cl, Br, and I)- and Si donor-induced levels.
AB - Using a first-principles pseudopotential method, we studied an effective n-type doping strategy through codoping SiAl–XN (X = F, Cl, Br, and I) in aluminum nitride. Results revealed that the donor ionization energy of the SiAl–XN complex is much lower than that of the corresponding isolated SiAl impurity. Theoretically obtained ε(+/0) ionization energies are all near the conduction band minimum (CBM), which is only 1.4 meV below the CBM of the SiAl–FN pair. The low ε(+/0) ionization energy of the SiAl–XN complex can be explained by the combined repulsion between the X element (X = F, Cl, Br, and I)- and Si donor-induced levels.
UR - https://www.scopus.com/pages/publications/84910022103
U2 - 10.7567/APEX.7.111004
DO - 10.7567/APEX.7.111004
M3 - Article
SN - 1882-0778
VL - 7
SP - 111004
JO - Applied Physics Express
JF - Applied Physics Express
IS - 11
ER -