Effects of silicon nitride interlayer on phase transformation and adhesion of TiNi films

Yong Qing Fu; Hejun Du; Sam Zhang; Soon-Eng Ong

doi:10.1016/j.tsf.2004.09.058

Effects of silicon nitride interlayer on phase transformation and adhesion of TiNi films

Yong Qing Fu, Hejun Du, Sam Zhang, Soon-Eng Ong

Mathematics, Physics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

TiNi films with different Ti/Ni ratios were deposited on Si substrates with and without silicon nitride interlayer. Near-equiatomic TiNi films were found to have the lowest residual stress and the highest recovery stress regardless of the existence of silicon nitride interlayer. The addition of silicon nitride interlayer between film and Si substrate did not cause much change in phase transformation behavior as well as adhesion properties. X-ray photoelectron spectroscopy (XPS) analysis revealed that there is significant interdiffusion of elements and formation of Ti–N and Si–Si bonds at TiNi film/silicon nitride interface. Scratch test results showed that adhesion between the TiNi film and substrate was slightly improved with the increase of Ti content in TiNi films.

Original language	English
Pages (from-to)	352-357
Journal	Thin Solid Films
Volume	476
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2004.09.058
Publication status	Published - 8 Apr 2005

Keywords

TiNi
Adhesion
Sputtering
Shape memory
XPS
Silicon nitride

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10.1016/j.tsf.2004.09.058

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abstract = "TiNi films with different Ti/Ni ratios were deposited on Si substrates with and without silicon nitride interlayer. Near-equiatomic TiNi films were found to have the lowest residual stress and the highest recovery stress regardless of the existence of silicon nitride interlayer. The addition of silicon nitride interlayer between film and Si substrate did not cause much change in phase transformation behavior as well as adhesion properties. X-ray photoelectron spectroscopy (XPS) analysis revealed that there is significant interdiffusion of elements and formation of Ti–N and Si–Si bonds at TiNi film/silicon nitride interface. Scratch test results showed that adhesion between the TiNi film and substrate was slightly improved with the increase of Ti content in TiNi films.",

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T1 - Effects of silicon nitride interlayer on phase transformation and adhesion of TiNi films

AU - Fu, Yong Qing

AU - Du, Hejun

AU - Zhang, Sam

AU - Ong, Soon-Eng

PY - 2005/4/8

Y1 - 2005/4/8

N2 - TiNi films with different Ti/Ni ratios were deposited on Si substrates with and without silicon nitride interlayer. Near-equiatomic TiNi films were found to have the lowest residual stress and the highest recovery stress regardless of the existence of silicon nitride interlayer. The addition of silicon nitride interlayer between film and Si substrate did not cause much change in phase transformation behavior as well as adhesion properties. X-ray photoelectron spectroscopy (XPS) analysis revealed that there is significant interdiffusion of elements and formation of Ti–N and Si–Si bonds at TiNi film/silicon nitride interface. Scratch test results showed that adhesion between the TiNi film and substrate was slightly improved with the increase of Ti content in TiNi films.

AB - TiNi films with different Ti/Ni ratios were deposited on Si substrates with and without silicon nitride interlayer. Near-equiatomic TiNi films were found to have the lowest residual stress and the highest recovery stress regardless of the existence of silicon nitride interlayer. The addition of silicon nitride interlayer between film and Si substrate did not cause much change in phase transformation behavior as well as adhesion properties. X-ray photoelectron spectroscopy (XPS) analysis revealed that there is significant interdiffusion of elements and formation of Ti–N and Si–Si bonds at TiNi film/silicon nitride interface. Scratch test results showed that adhesion between the TiNi film and substrate was slightly improved with the increase of Ti content in TiNi films.

KW - TiNi

KW - Adhesion

KW - Sputtering

KW - Shape memory

KW - XPS

KW - Silicon nitride

U2 - 10.1016/j.tsf.2004.09.058

DO - 10.1016/j.tsf.2004.09.058

M3 - Article

SN - 0040-6090

VL - 476

SP - 352

EP - 357

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Effects of silicon nitride interlayer on phase transformation and adhesion of TiNi films

Abstract

Keywords

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