Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering

Martin Birkett; Jason Brooker; Roger Penlington; Alasdair Wilson; Kian Tan

doi:10.1049/iet-smt:20070076

Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering

Martin Birkett, Jason Brooker, Roger Penlington, Alasdair Wilson, Kian Tan

Mechanical and Construction Engineering Department

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity () and an improvement in long term stability (/) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N2 atmospheres. A temperature region is proposed where `near zero' TCR (ppm/°C) and long term stability of better than 0.2% can be realised.

Original language	English
Pages (from-to)	304-309
Journal	IET Science, Measurement and Technology
Volume	2
Issue number	5
DOIs	https://doi.org/10.1049/iet-smt:20070076
Publication status	Published - Sept 2008

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title = "Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering",

abstract = "Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity () and an improvement in long term stability (/) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N2 atmospheres. A temperature region is proposed where `near zero' TCR (ppm/°C) and long term stability of better than 0.2% can be realised.",

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AU - Birkett, Martin

AU - Brooker, Jason

AU - Penlington, Roger

AU - Wilson, Alasdair

AU - Tan, Kian

PY - 2008/9

Y1 - 2008/9

N2 - Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity () and an improvement in long term stability (/) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N2 atmospheres. A temperature region is proposed where `near zero' TCR (ppm/°C) and long term stability of better than 0.2% can be realised.

AB - Thin film resistors have been manufactured to evaluate the electrical performance characteristics of AlCuMo thin films. The films were prepared on Al2O3 substrates at room temperature as a function of Mo concentration by DC magnetron sputtering and were then annealed at various temperatures in air and N2 atmospheres. The effect of annealing temperature on the electrical properties of the films was systematically investigated. Increase in Mo content produced a decrease in temperature coefficient of resistance (TCR), an increase in resistivity () and an improvement in long term stability (/) of the films. TCR varied from negative to positive and further improvements in resistance stability of the films were also achieved through increasing annealing temperature in both air and N2 atmospheres. A temperature region is proposed where `near zero' TCR (ppm/°C) and long term stability of better than 0.2% can be realised.

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DO - 10.1049/iet-smt:20070076

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SP - 304

EP - 309

JO - IET Science, Measurement and Technology

JF - IET Science, Measurement and Technology

IS - 5

ER -

Electrical characterisation of AlCuMo thin films prepared by DC magnetron sputtering

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