Electrical characteristics of metal contacts on porous silicon

M. Mabrook, Asim Ray, Zabih Ghassemlooy, S. Brown

Research output: Contribution to conferencePaperpeer-review

Abstract

I(V) and C(V) characteristics of aluminium-porous silicon (PS) contacts were measured in the temperature range of 77-300 K for a sample prepared from 8-12 Ω·cm p-type silicon. The barrier height derived from the I(V) characteristics was found to depend linearly on temperature. The ideality factor was estimated to be 11.5 for the temperature range of 77-300 K. A decrease of contact differential capacitance, measured at 1 kHz, with decreasing temperature is observed.
Original languageEnglish
DOIs
Publication statusPublished - 3 Oct 1995
EventIEE Colloquium on Materials for Displays - London, UK
Duration: 3 Oct 1995 → …

Conference

ConferenceIEE Colloquium on Materials for Displays
Period3/10/95 → …

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