Abstract
I(V) and C(V) characteristics of aluminium-porous silicon (PS) contacts were measured in the temperature range of 77-300 K for a sample prepared from 8-12 Ω·cm p-type silicon. The barrier height derived from the I(V) characteristics was found to depend linearly on temperature. The ideality factor was estimated to be 11.5 for the temperature range of 77-300 K. A decrease of contact differential capacitance, measured at 1 kHz, with decreasing temperature is observed.
Original language | English |
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DOIs | |
Publication status | Published - 3 Oct 1995 |
Event | IEE Colloquium on Materials for Displays - London, UK Duration: 3 Oct 1995 → … |
Conference
Conference | IEE Colloquium on Materials for Displays |
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Period | 3/10/95 → … |