Electrical characteristics of metal contacts on porous silicon

M. Mabrook; Asim Ray; Zabih Ghassemlooy; S. Brown

doi:10.1049/ic:19950981

Electrical characteristics of metal contacts on porous silicon

M. Mabrook, Asim Ray, Zabih Ghassemlooy, S. Brown

Research output: Contribution to conference › Paper › peer-review

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Abstract

I(V) and C(V) characteristics of aluminium-porous silicon (PS) contacts were measured in the temperature range of 77-300 K for a sample prepared from 8-12 Ω·cm p-type silicon. The barrier height derived from the I(V) characteristics was found to depend linearly on temperature. The ideality factor was estimated to be 11.5 for the temperature range of 77-300 K. A decrease of contact differential capacitance, measured at 1 kHz, with decreasing temperature is observed.

Original language	English
DOIs	https://doi.org/10.1049/ic:19950981
Publication status	Published - 3 Oct 1995
Event	IEE Colloquium on Materials for Displays - London, UK Duration: 3 Oct 1995 → …

Conference

Conference	IEE Colloquium on Materials for Displays
Period	3/10/95 → …

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1049/ic:19950981

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title = "Electrical characteristics of metal contacts on porous silicon",

abstract = "I(V) and C(V) characteristics of aluminium-porous silicon (PS) contacts were measured in the temperature range of 77-300 K for a sample prepared from 8-12 Ω·cm p-type silicon. The barrier height derived from the I(V) characteristics was found to depend linearly on temperature. The ideality factor was estimated to be 11.5 for the temperature range of 77-300 K. A decrease of contact differential capacitance, measured at 1 kHz, with decreasing temperature is observed.",

author = "M. Mabrook and Asim Ray and Zabih Ghassemlooy and S. Brown",

year = "1995",

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doi = "10.1049/ic:19950981",

language = "English",

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TY - CONF

T1 - Electrical characteristics of metal contacts on porous silicon

AU - Mabrook, M.

AU - Ray, Asim

AU - Ghassemlooy, Zabih

AU - Brown, S.

PY - 1995/10/3

Y1 - 1995/10/3

N2 - I(V) and C(V) characteristics of aluminium-porous silicon (PS) contacts were measured in the temperature range of 77-300 K for a sample prepared from 8-12 Ω·cm p-type silicon. The barrier height derived from the I(V) characteristics was found to depend linearly on temperature. The ideality factor was estimated to be 11.5 for the temperature range of 77-300 K. A decrease of contact differential capacitance, measured at 1 kHz, with decreasing temperature is observed.

AB - I(V) and C(V) characteristics of aluminium-porous silicon (PS) contacts were measured in the temperature range of 77-300 K for a sample prepared from 8-12 Ω·cm p-type silicon. The barrier height derived from the I(V) characteristics was found to depend linearly on temperature. The ideality factor was estimated to be 11.5 for the temperature range of 77-300 K. A decrease of contact differential capacitance, measured at 1 kHz, with decreasing temperature is observed.

UR - https://www.scopus.com/pages/publications/0029511333

U2 - 10.1049/ic:19950981

DO - 10.1049/ic:19950981

M3 - Paper

T2 - IEE Colloquium on Materials for Displays

Y2 - 3 October 1995

ER -

Electrical characteristics of metal contacts on porous silicon

Abstract

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