Abstract
Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is shown to act as an electrically driven single-photon source. At low injection currents, the dot electroluminescence spectrum reveals a single sharp line due to exciton recombination, while another line due to the biexciton emerges at higher currents. The second-order correlation function of the diode displays anti-bunching under a continuous drive current. Single-photon emission is stimulated by subnanosecond voltage pulses. These results suggest that semiconductor technology can be used to mass-produce a single-photon source for applications in quantum information technology.
| Original language | English |
|---|---|
| Pages (from-to) | 102-105 |
| Journal | Science |
| Volume | 295 |
| Issue number | 5552 |
| DOIs | |
| Publication status | Published - 2002 |