TY - JOUR
T1 - Electrochemical Strategy for High-Resolution Nanostructures in Laser-Heat-Mode Resist Toward Next Generation Diffractive Optical Elements
AU - Wang, Zhengwei
AU - Chen, Guodong
AU - Wen, Ming
AU - Hu, Xutao
AU - Liu, Xing
AU - Wei, Jingsong
AU - Wu, Qingsheng
AU - Fu, Yongqing
N1 - Funding information: This work was partially supported by the National Natural Science Foundation of China (Nos. 61627826 and 22171212), Strategic High-Tech Innovation Fund of the Chinese Academy of Sciences (GQRC-19-08), International Corporation Project of Shanghai Committee of Science and Technology by China (21160710300), International Exchange Grant (IEC/NSFC/201078) of Royal Society UK and NSFC. Author 1 (Zhengwei Wang) and Author 2 (Guodong Chen) contributed equally to this work.
PY - 2022/4/27
Y1 - 2022/4/27
N2 - For achieving high-resolution nanostructures for next-generation diffractive optical elements (DOEs) using an environmentally friendly process, an electrochemical development strategy is proposed and developed using AgInSbTe-based laser heat-mode resist (AIST-LHR). Based on the electrical resistivity difference of amorphous and crystalline phases for this resist, an etching selectivity ratio of ≈30:1 (i.e., the etch ratio between the amorphous and crystalline ones) is achieved through the oxidation of Fe
3+ ions with the assisted pitting activation etching using Cl
− ions in an acid medium. Nanostructures with a minimum feature size down to 41 nm are successfully generated, including grating patterns, meta-surface optical structures, gears, and English characters. Using a post-plasma etching process, the nanostructures are successfully transferred from the AIST-HLR onto silica substrate, and X-ray grating patterns with a line space of 80 nm are created as a demonstration for its potential applications in DOEs.
AB - For achieving high-resolution nanostructures for next-generation diffractive optical elements (DOEs) using an environmentally friendly process, an electrochemical development strategy is proposed and developed using AgInSbTe-based laser heat-mode resist (AIST-LHR). Based on the electrical resistivity difference of amorphous and crystalline phases for this resist, an etching selectivity ratio of ≈30:1 (i.e., the etch ratio between the amorphous and crystalline ones) is achieved through the oxidation of Fe
3+ ions with the assisted pitting activation etching using Cl
− ions in an acid medium. Nanostructures with a minimum feature size down to 41 nm are successfully generated, including grating patterns, meta-surface optical structures, gears, and English characters. Using a post-plasma etching process, the nanostructures are successfully transferred from the AIST-HLR onto silica substrate, and X-ray grating patterns with a line space of 80 nm are created as a demonstration for its potential applications in DOEs.
KW - AgInSbTe laser heat-mode resists
KW - diffractive optical elements
KW - electrochemical development
KW - high-resolution lithography
UR - http://www.scopus.com/inward/record.url?scp=85126895904&partnerID=8YFLogxK
U2 - 10.1002/smll.202200249
DO - 10.1002/smll.202200249
M3 - Article
SN - 1613-6810
VL - 18
JO - Small
JF - Small
IS - 17
M1 - 2200249
ER -