Abstract
Highly uniform reduced graphene oxide (rGO) array patterns with both stripe and square shapes have been fabricated on various substrates using PDMS based soft lithography. Morphology, structure and electrical properties of the GO patterns before and after annealing at 800 °C in H2 atmosphere were investigated. The conductivity and carriers mobilities of the rGO patterns were improved by four orders after H2-reduction. Temperature-dependent electrical measurements showed that charge transport occurs via a variable range hopping mechanism.
Original language | English |
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Pages (from-to) | 889-894 |
Journal | Nanoscience and Nanotechnology Letters |
Volume | 4 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sept 2012 |
Keywords
- Reduced graphene oxide pattern
- soft lithography
- variable range hopping